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Strained quantum well laser for high temperature operation
其他题名Strained quantum well laser for high temperature operation
DERRY, PAMELA L.; HONG, CHI-SHAIN; CHAN, ERIC Y.; FIGUEROA, LUIS; FU, R. JENNHWA
1993-02-23
专利权人CURATORS OF THE UNIVERSITY OF MISSOURI, THE
公开日期1993-02-23
授权国家美国
专利类型授权发明
摘要A semiconductor laser having increased reliability and enhanced high temperature operation. The device is based upon GaAs/AlGaAs, and comprises a quantum well active layer that is strained by the inclusion of the indium. The rear facet of the device has a high reflectivity coating, and the front facet reflectivity and cavity length are adjusted based upon the required output power. For high output power at high temperature, long cavity lengths and low front facet reflectivities are used. For low current operation and low output power at high temperature, shorter cavities and higher front facet reflectivities are used. The lasers are capable of reliably operating at temperatures up to and in excess of 100 DEG C.
其他摘要半导体激光器具有增强的可靠性和增强的高温操作。该器件基于GaAs / AlGaAs,并且包括通过包含铟而应变的量子阱有源层。该装置的后端面具有高反射率涂层,并且基于所需的输出功率调节前端面反射率和腔长度。对于高温下的高输出功率,使用长腔长度和低前端面反射率。对于低电流操作和高温下的低输出功率,使用更短的空腔和更高的前端面反射率。激光器能够在高达100℃的温度下可靠地工作。
主权项A semiconductor laser, comprising: a substrate on which is defined a layered semiconductor structure including an active region of length L, the active region comprising a quantum well surrounded by optical confining layers, and cladding layers; first and second electrodes through which an electrical current flows to excite the active region; the active region further comprising front and rear faces, the rear face having a high reflectivity coating thereon, the length L and the reflectivity R of the front end face being selected as a function of a threshold carrier density and a desired operating temperature of up to 100.degree. C., as determined by computer modeling the operation of the laser so as to minimize a plurality of parameters, including: (a) a threshold current density; (b) the length; (c) a threshold current; and (d) power consumption; said plurality of parameters (a) through (d) being minimized and selected consistent with achieving a design output power at the desired operating temperature, such that the laser is capable of operating reliably and producing the design output power at the desired operating temperature for at least 2000 hours.
申请日期1991-09-06
专利号US5189679
专利状态失效
申请号US07/756193
公开(公告)号US5189679
IPC 分类号H01S5/343 | H01S5/00 | H01S5/028 | H01S5/10 | H01S3/19
专利代理人-
代理机构CHRISTENSEN,O'CONNOR,JOHNSON & KINDNESS
文献类型专利
条目标识符http://ir.opt.ac.cn/handle/181661/46036
专题半导体激光器专利数据库
作者单位CURATORS OF THE UNIVERSITY OF MISSOURI, THE
推荐引用方式
GB/T 7714
DERRY, PAMELA L.,HONG, CHI-SHAIN,CHAN, ERIC Y.,et al. Strained quantum well laser for high temperature operation. US5189679[P]. 1993-02-23.
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