Self-pulsating laser diode and a method for causing a laser diode to output light pulses

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	Self-pulsating laser diode and a method for causing a laser diode to output light pulses
其他题名	Self-pulsating laser diode and a method for causing a laser diode to output light pulses
	O'GORMAN, JAMES CHRISTOPHER; MCEVOY, PAUL; LYNCH, STEPHEN ANTHONY; LANDAIS, PASCAL MICHEL
	2004-10-12
专利权人	PROVOST, FELLOWS AND SCHOLARS OF THE COLLEGE OF THE HOLY AND UNDIVIDED TRINITY OF QUEEN ELIZABETH NEAR DUBLIN, THE
公开日期	2004-10-12
授权国家	美国
专利类型	授权发明
摘要	A semiconductor self-pulsating laser diode (1) comprises a wave guiding layer (2) sandwiched between lower and upper cladding layers (4, 5). A current blocking layer (8) defining a slot (10) through which pumping current is directed through the laser diode between upper and lower contact plates (5, 6) defines an active wave guiding region (15). The current blocking layer (8) is shaped by the formation of longitudinally extending recesses (12) for defining the active wave guiding region (15) such that a central pulse light generating region (17) is formed surrounded by an outer light propagating region (18). As the laser diode is continuously pumped, an effective step change in refractive index between the wave guiding layer (2) and the outer light propagating region (18) is formed, and the carrier density and refractive index profiles across the active wave guiding region (15) vary as each light pulse cycle progresses. Initially, the carrier density in the central pulse light generating region 17 rises relative to the carrier density in the light propagating region 18 until the difference between the refractive index of the pulse light generating region 17 and the refractive index of the light propagating region 18 is at its greatest, and the carrier density of the pulse light generating region 17 reaches its lasing threshold value. At this stage lasing commences in the active wave guiding region 15. Lasing in the pulse light generating region 17 progressively reduces the carrier density therein, which in turn progressively reduces the relative difference between the refractive index of the pulse light generating region 17 and the light propagating region 18 until the refractive index of the pulse light generating region 17 approaches the refractive index of the light propagating region 18, thereby increasing guiding of lasing light into the pulse light generating region 17 for emission of the light pulse therefrom. At that stage the carrier density of the active wave guiding region 15 falls below its lasing threshold value, thus extinguishing the lasing light, and the next light pulse cycle commences.
其他摘要	半导体自脉冲激光二极管（1）包括夹在下包层（4）和下包层（5）之间的波导层（2）。限定槽（10）的电流阻挡层（8）限定了有源波导引区域（15），泵浦电流通过该槽（10）引导通过上下接触板（5,6）之间的激光二极管。电流阻挡层（8）通过形成纵向延伸的凹槽（12）而成形，用于限定有源波导引区域（15），使得中心脉冲光产生区域（17）形成为由外部光传播区域围绕（ 18）。当连续泵浦激光二极管时，形成波导层（2）和外部光传播区域（18）之间的折射率的有效阶跃变化，以及跨越有源波导区域的载流子密度和折射率分布（ 15）随着每个光脉冲周期的进展而变化。最初，载流子密度在中心脉冲光中产生区域17相对于光传播区域18中的载流子密度上升，直到脉冲光产生区域17的折射率与光传播区域18的折射率之间的差最大，并且脉冲的载流子密度光产生区域17达到其激光阈值。在此阶段，激光开始于有源波导引区15中。脉冲光产生区17中的激光逐渐减小其中的载流子密度，这又逐渐减小脉冲光产生区17的折射率与光之间的相对差异。传播区域18直到脉冲光产生区域17的折射率接近光传播区域18的折射率，从而增加激光进入脉冲光产生区域17的引导，以从其发射光脉冲。在那个阶段，有源波的载流子密度引导区域15低于其激光阈值，从而熄灭激光，并开始下一个光脉冲周期。
主权项	A semiconductor self-pulsating laser diode (1, 30, 40) comprising a wave guiding layer (2), characterised in that the laser diode (1, 30 configured so that when the laser diode is pumped, (a) an active wave guiding region (15) is defined in the wave guiding layer (2), the active wave guiding region (15) comprising a pulsed light generating region (17) in which pulsed light is guided during respective sequential light pulse cycles, the pulse light generating region (17) extending longitudinally in the direction of pulsed light propagation, and an adjacent light propagating region (18) in which light is propagated, and the refractive index of the light propagating region (18) is higher than the refractive index of the adjacent wave guiding layer (2), and (b) during each light pulse cycle the carrier density profile across the active wave guiding region (15) progressively varies such that initially the carrier density in the pulse light generating region (17) rises relative to the carrier density in the light propagating region (18) until the difference between the refractive index of the pulse light generating region (17) and the refractive index of the light propagating region (18) is at its greatest, and the carrier density of the pulse light generating region (17) reaches its lasing threshold value, thus causing lasing to commence in the active wave guiding region (15), and the lasing in the pulse light generating region (17) progressively reduces the carrier density therein, which in turn progressively reduces the relative difference between the refractive index of the pulse light generating region (17) and the light propagating region (18) until the refractive index of the pulse light generating region (17) approaches the refractive index of the light propagating region (18), thereby increasing guiding of the lasing light into the pulse light generation region (17) for emission of the light pulse therefrom, at which stage the carrier density of the active wave guiding region (15) falls below its lasing threshold value extinguishing the lasing light, and the next light pulse cycle commences.
申请日期	2003-03-14
专利号	US6804272
专利状态	失效
申请号	US10/257680
公开（公告）号	US6804272
IPC 分类号	H01S5/223 \| H01S5/00 \| H01S5/20 \| H01S5/065 \| H01S5/22 \| H01S5/04 \| H01S5/06 \| H01S3/13
专利代理人	-
代理机构	SUGHRUE MION,PLLC
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45993
专题	半导体激光器专利数据库
作者单位	PROVOST, FELLOWS AND SCHOLARS OF THE COLLEGE OF THE HOLY AND UNDIVIDED TRINITY OF QUEEN ELIZABETH NEAR DUBLIN, THE
推荐引用方式 GB/T 7714	O'GORMAN, JAMES CHRISTOPHER,MCEVOY, PAUL,LYNCH, STEPHEN ANTHONY,et al. Self-pulsating laser diode and a method for causing a laser diode to output light pulses. US6804272[P]. 2004-10-12.

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