発光素子用材料およびその製作方法

OPT OpenIR > 半导体激光器专利数据库

	発光素子用材料およびその製作方法
其他题名	発光素子用材料およびその製作方法
	助川徳三; 木村雅和
	1994-12-12
专利权人	助川徳三
公开日期	1994-12-12
授权国家	日本
专利类型	授权发明
摘要	PURPOSE:To provide materials and manufacturing process that are applicable in performing an optical communication, materials of which are cheaper than those of a green emission element where a GaAsP inclined layer is prepared on a GaAs substrate and, designs of which can be performed as an element in an arbitrary manner by causing an InGaP mixed crystal of 0.5-0.75 in terms of mol fraction of GaP to grow stepwise on a GaP substrate. CONSTITUTION:A gallium phosphide (GaP) substrate is arranged at the upper side and an InGaP alloy having a composition of 0.50-0.75 in terms of mol fraction of GaP is arranged at the lower side and its intermediate part between the above two sides is filled with an In-Ga solution that deposits indium/gallium phosphide (InGaP) of around 0.85-0 in terms of GaP mol fraction when such a crystal growth starts. Then, a solute that is dissolved from a raw material alloy side by fluctuating simultaneously temperatures of the GaP substrate, raw material alloy, and the solution at a some temperature difference is transported to a GaP substrate crystal side. Subsequently, the solute permits an InGaP epitaxial layer where InP mol fraction is stepwise added to grow and after cycling a temperature several times the solute also permits an InGaP single crystal where a mixed crystal composition in 0.5-0.75 in terms of GaP mol fraction to grow. And furthermore, pn junction is formed on the InGaP single crystal by a diffusion or a liquid growth technology. A material for emission element having such a structure makes it possible not only to take out light in an arbitrary direction but also to perform designs regarding the emission element for an optical communication from more unrestricted standpoints.
其他摘要	目的：提供适用于光学通信的材料和制造工艺，其材料比在GaAs衬底上制备GaAsP倾斜层的绿色发射元件的材料便宜，并且其设计可以作为通过使GaP的摩尔分数为0.5-0.75的InGaP混晶在GaP衬底上逐步生长，以任意方式获得元素。组成：磷化镓（GaP）基板布置在上侧，以GaP的摩尔分数计，组成为0.50-0.75的InGaP合金布置在下侧，并且在上述两侧之间的中间部分被填充当这样的晶体生长开始时，以GaP摩尔分数沉积约0.85-0的铟/磷化镓（InGaP）的In-Ga溶液。然后，是一个溶质通过同时波动GaP基板，原料合金和在一定温度差下的溶液的温度从原料合金侧溶解，将其输送到GaP基板晶体侧。随后，溶质允许InGaP外延层，其中逐步添加InP摩尔分数以生长并且在循环几次之后溶质也允许InGaP单晶，其中以GaP摩尔分数计在0.5-0.75的混合晶体组分生长。此外，通过扩散或液体生长技术在InGaP单晶上形成pn结。具有这种结构的发光元件的材料使得不仅可以在任意方向上取出光而且可以从更加不受限制地执行关于用于光通信的发光元件的设计。立场。
主权项	-
申请日期	1986-09-26
专利号	JP1994101585B2
专利状态	失效
申请号	JP1986226275
公开（公告）号	JP1994101585B2
IPC 分类号	H01S \| H01L \| H01L33/10 \| H01L33/16 \| H01L21/208 \| H01L33/44 \| H01S5/00 \| H01L31/10 \| H01L33/30 \| H01L33/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45960
专题	半导体激光器专利数据库
作者单位	助川徳三
推荐引用方式 GB/T 7714	助川徳三,木村雅和. 発光素子用材料およびその製作方法. JP1994101585B2[P]. 1994-12-12.