Method of producing multi-wavelength semiconductor laser device

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	Method of producing multi-wavelength semiconductor laser device
其他题名	Method of producing multi-wavelength semiconductor laser device
	LEE, SANG DON
	2009-10-20
专利权人	SAMSUNG ELECTRONICS CO., LTD.
公开日期	2009-10-20
授权国家	美国
专利类型	授权发明
摘要	A method for producing a multi-wavelength semiconductor laser device includes steps of: forming first and second nitride epitaxial layers in parallel on a substrate for growth of a nitride single crystal; separating the first and second nitride epitaxial layers from the substrate; attaching the separated first and second nitride epitaxial layers to a first conductivity-type substrate; selectively removing the first and second nitride semiconductor epitaxial layers to expose a portion of the first conductivity-type substrate and to form first and second semiconductor laser structures, respectively; and forming a third semiconductor laser structure on the exposed portion of the first conductivity-type substrate.
其他摘要	一种制造多波长半导体激光器件的方法，包括以下步骤：在衬底上平行形成第一和第二氮化物外延层，以生长氮化物单晶;将第一和第二氮化物外延层与衬底分开;将分离的第一和第二氮化物外延层附着到第一导电类型基板;选择性地去除第一和第二氮化物半导体外延层以暴露第一导电类型衬底的一部分并分别形成第一和第二半导体激光器结构;在第一导电型基板的露出部分上形成第三半导体激光器结构。
主权项	A method for producing a multi-wavelength semiconductor laser device, comprising the steps of: preparing a substrate for growth of a nitride single crystal thereon; sequentially growing a first conductivity-type first clad layer, a first active layer and a second conductivity-type first clad layer on the substrate, to form a first nitride epitaxial layer; selectively removing the first nitride epitaxial layer such that a portion of the substrate is exposed; sequentially growing a first conductivity-type second clad layer, a second active layer and a second conductivity-type second clad layer on the exposed portion of the substrate, to form a second nitride epitaxial layer; separating the first and second nitride epitaxial layers from the substrate; attaching the separated first and second nitride epitaxial layers to a first conductivity type substrate; selectively etching the first and second nitride semiconductor epitaxial layers to expose a portion of the first conductivity-type substrate and to form first and second semiconductor laser structures from the first and second nitride epitaxial layers, respectively, the first and second semiconductor laser structures being separated from each other; sequentially growing a first conductivity-type third clad layer, a third active layer and a second conductivity-type third clad layer on the exposed portion of the first conductivity-type substrate, to form a third semiconductor laser structure; and forming a first electrode connected to a bottom surface of the first conductivity-type substrate and forming second electrodes connected to the respective second conductivity-type clad layers of the first, second and third semiconductor laser structures.
申请日期	2007-09-18
专利号	US7606280
专利状态	失效
申请号	US11/857192
公开（公告）号	US7606280
IPC 分类号	H01S5/00 \| H01L21/00 \| H01S5/30 \| H01S5/02 \| H01S5/22 \| H01S5/323 \| H01S5/40
专利代理人	-
代理机构	LOWE HAUPTMAN HAM & BERNER
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45919
专题	半导体激光器专利数据库
作者单位	SAMSUNG ELECTRONICS CO., LTD.
推荐引用方式 GB/T 7714	LEE, SANG DON. Method of producing multi-wavelength semiconductor laser device. US7606280[P]. 2009-10-20.

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