Method of manufacturing a semiconductor laser device and a crystal growth apparatus for use in a semiconductor laser device

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	Method of manufacturing a semiconductor laser device and a crystal growth apparatus for use in a semiconductor laser device
其他题名	Method of manufacturing a semiconductor laser device and a crystal growth apparatus for use in a semiconductor laser device
	FUJII, HIROAKI; ENDO, KENJI
	2001-03-13
专利权人	RENESAS ELECTRONICS CORPORATION
公开日期	2001-03-13
授权国家	美国
专利类型	授权发明
摘要	In a method of manufacturing a semiconductor laser device having a double hetero structure which is structured by at least a first clad layer, an active layer and a second clad layer on a semiconductor substrate by the use of the organic metal vapor growth method, crystal is grown in first atmosphere gas containing hydrogen in a temperature rising process. Subsequently, the first atmosphere gas is switched into second atmosphere gas in a temperature dropping process after the crystal growth. The second atmosphere gas contains no hydrogen.
其他摘要	在制造具有双异质结构的半导体激光器件的方法中，晶体是通过使用有机金属气相生长方法在半导体衬底上至少由第一覆层，有源层和第二覆层构成的。在升温过程中在含氢的第一气氛中生长。随后，在晶体生长之后，在降温过程中将第一气氛气体切换成第二气氛气体。第二种气氛气体不含氢。
主权项	A method of manufacturing a semiconductor laser device having a double hetero structure which is structured by at least a first clad layer, an active layer and a second clad layer on a semiconductor substrate by the use of the organic metal vapor growth method, comprising the steps of: growing a crystal in a first atmosphere gas containing hydrogen in a temperature rising process, switching the first atmosphere gas into a second atmosphere gas containing no hydrogen in a temperature dropping process after the crystal growth, and retaining the semiconductor substrate at a constant temperature of from 450.degree. C. to 500.degree. C. for a fixed period of time in the temperature dropping process.
申请日期	1999-07-14
专利号	US6200382
专利状态	失效
申请号	US09/352775
公开（公告）号	US6200382
IPC 分类号	C30B25/02 \| H01L21/205 \| H01L21/02 \| H01S5/343 \| H01S5/223 \| H01S5/00 \| H01L33/06 \| H01L33/12 \| H01L33/14 \| H01L33/30 \| H01S5/323 \| C30B33/06
专利代理人	-
代理机构	SUGHRUE,MION,ZINN,MACPEAK & SEAS,PLLC
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45891
专题	半导体激光器专利数据库
作者单位	RENESAS ELECTRONICS CORPORATION
推荐引用方式 GB/T 7714	FUJII, HIROAKI,ENDO, KENJI. Method of manufacturing a semiconductor laser device and a crystal growth apparatus for use in a semiconductor laser device. US6200382[P]. 2001-03-13.

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