Wavelength-variable semiconductor laser, optical integrated device utilizing the same, and production method thereof

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	Wavelength-variable semiconductor laser, optical integrated device utilizing the same, and production method thereof
其他题名	Wavelength-variable semiconductor laser, optical integrated device utilizing the same, and production method thereof
	KITAOKA, YASUO; MIZUUCHI, KIMINORI; YAMAMOTO, KAZUHISA
	2001-12-04
专利权人	BOC EDWARDS, INC.
公开日期	2001-12-04
授权国家	美国
专利类型	授权发明
摘要	A wavelength-variable semiconductor laser includes: a submount; and a semiconductor laser chip being mounted onto the submount and having at least an active layer region and a distributed Bragg reflection region, wherein the semiconductor laser chip is mounted onto the submount in such a manner that an epitaxial growth surface thereof faces the submount and a heat transfer condition of the active layer region is different from a heat transfer condition of the distributed Bragg reflection region. Moreover, an optical integrated device includes at least a semiconductor laser and an optical waveguide device both mounted on a submount, wherein the semiconductor laser is the wavelength-variable semiconductor laser as set forth above.
其他摘要	一种波长可变半导体激光器，包括：基座;半导体激光器芯片安装在基座上并至少具有有源层区域和分布式布拉格反射区域，其中半导体激光器芯片以其外延生长表面面向基板的方式安装到基座上并且有源层区域的传热条件不同于分布式布拉格反射区域的传热条件。此外，光学集成装置至少包括安装在基座上的半导体激光器和光波导装置，其中半导体激光器是如上所述的波长可变半导体激光器。
主权项	A wavelength-variable semiconductor laser, comprising: a submount; and a semiconductor laser chip being mounted onto the submount and having at least an active layer region and a distributed Bragg reflection region, wherein the semiconductor laser chip is mounted onto the submount in such a manner that an epitaxial growth surface thereof faces the submount and a heat transfer condition of the active layer region is different from a heat transfer condition of the distributed Bragg reflection region.
申请日期	1998-09-02
专利号	US6327289
专利状态	失效
申请号	US09/146024
公开（公告）号	US6327289
IPC 分类号	H01S5/00 \| G02B6/12 \| G02B6/42 \| G02F1/377 \| H01S5/02 \| H01S5/022 \| H01S5/024 \| H01S5/026 \| H01S5/042 \| H01S5/0625 \| H01S5/125
专利代理人	-
代理机构	RATNER & PRESTIA
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45829
专题	半导体激光器专利数据库
作者单位	BOC EDWARDS, INC.
推荐引用方式 GB/T 7714	KITAOKA, YASUO,MIZUUCHI, KIMINORI,YAMAMOTO, KAZUHISA. Wavelength-variable semiconductor laser, optical integrated device utilizing the same, and production method thereof. US6327289[P]. 2001-12-04.

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