Controlled far-field pattern selection in diffraction-coupled semiconductor laser arrays

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	Controlled far-field pattern selection in diffraction-coupled semiconductor laser arrays
其他题名	Controlled far-field pattern selection in diffraction-coupled semiconductor laser arrays
	WILCOX, JAROSLAVA Z.; JANSEN, MICHAEL; SILVER, ARNOLD H.; YANG, JANE J. J.; SIMMONS, WILLIAM W.
	1988-08-16
专利权人	NORTHROP GRUMMAN CORPORATION
公开日期	1988-08-16
授权国家	美国
专利类型	授权发明
摘要	A diffraction-coupled semiconductor laser array, and a related method for its operation, the array structure having a diffraction section that is electrically controllable independently of a waveguide section having multiple laser channels. Above a critical level of injected gain in the diffraction region, and with appropriate selection of channel and diffraction region dimensions, stable operation in the in-phase supermode results, with adjacent lasers operating in phase and a single-lobed far-field distribution pattern being produced. Below the critical level of injected gain, the out-of-phase supermode or multimode operation is favored and the narrow single peak of the far-field pattern is no longer present. This mode switching can be used to rapidly modulate operation of the array without directly switching it on and off.
其他摘要	衍射耦合半导体激光器阵列及其操作的相关方法，该阵列结构具有可独立于具有多个激光通道的波导部分电控制的衍射部分。在衍射区域的注入增益的临界水平之上，并且通过适当选择通道和衍射区域尺寸，在同相超模中产生稳定的操作，相邻激光器在相位上操作并且单瓣远场分布图案是产生的。低于注入增益的临界水平，有利于异相超模或多模操作，并且不再存在远场模式的窄单峰。该模式切换可用于快速调制阵列的操作，而无需直接打开和关闭它。
主权项	A diffraction-coupled semiconductor laser array capable of being switched between essentially in-phase and essentially out-of-phase supermodes of operation, the array comprising: a waveguide section having an array of semiconductor lasers coupled together by evanescent coupling, and having one at least partially reflective optical emission element; a diffraction section connected to the waveguide section, and having an at least partially reflective optical emission element that cooperates with the optical emission element in the waveguide section, to produce lasing of the array; wherein the dimensions of the waveguide section and the diffraction section are selected to encourage in-phase lasing of the array; and wherein the diffraction section and the waveguide section have electrically isolated contact layers to switch the array, by independent current injection, between two different operating states, one of which promotes lasing in the in-phase supermode and the other of which promotes lasing in the out-of-phase supermode.
申请日期	1987-04-06
专利号	US4764935
专利状态	失效
申请号	US07/035108
公开（公告）号	US4764935
IPC 分类号	H01S5/40 \| H01S5/00 \| H01S5/062 \| H01S3/19
专利代理人	-
代理机构	HEAL, NOEL F. GIACCHERINI, THOMAS N.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45822
专题	半导体激光器专利数据库
作者单位	NORTHROP GRUMMAN CORPORATION
推荐引用方式 GB/T 7714	WILCOX, JAROSLAVA Z.,JANSEN, MICHAEL,SILVER, ARNOLD H.,et al. Controlled far-field pattern selection in diffraction-coupled semiconductor laser arrays. US4764935[P]. 1988-08-16.

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