Self-aligned fabrication method for ridge-waveguide semiconductor laser

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	Self-aligned fabrication method for ridge-waveguide semiconductor laser
其他题名	Self-aligned fabrication method for ridge-waveguide semiconductor laser
	HO, CHONG-LONG; LIN, CHIA-JU; HO, WEN-JENG; LIAW, JY-WANG
	2003-01-07
专利权人	CHUNGHWA TELECOM CO., LTD.
公开日期	2003-01-07
授权国家	美国
专利类型	授权发明
摘要	A self-aligned fabrication method utilizes dielectric planarization process for fabricating ridge waveguide semiconductor lasers. The dielectric planarization process starts with depositing a thick dielectric film onto the ridge-structured semiconductor wafer surface, and then the resulting corrugated dielectric surface is polished into a flat surface in a self-terminated manner. This dielectric flat surface is able to uniformly expose its semiconductor ridge tops by an overall etch-back process.
其他摘要	自对准制造方法利用电介质平坦化工艺来制造脊形波导半导体激光器。电介质平坦化工艺开始于在脊形结构的半导体晶片表面上沉积厚的电介质膜，然后以自终止的方式将所得的波纹电介质表面抛光成平坦表面。该电介质平坦表面能够通过整体回蚀工艺均匀地暴露其半导体脊顶部。
主权项	A self-aligned fabrication method for ridge-waveguide semiconductor laser comprising the steps of: a) providing an epitaxially grown, multi-layered laser structure that further includes a semiconductor substrate, a first semiconductor waveguide layer, a first semiconductor confinement layer, a semiconductor active layer region, a second semiconductor confinement layer, a second semiconductor waveguide layer, and a semiconductor ohmic contact layer; b) depositing a first dielectric layer on the entire surface of said semiconductor ohmic contact layer obtained from step a; c) forming a semiconductor ridge structure by using patterned said first dielectric structure obtained from step b as an etching mask and performing an etching process; d) depositing a second dielectric layer on the entire ridge-structured wafer surface obtained from step c for semiconductor surface passivation; e) depositing a third dielectric layer on the entire surface of ridge-structured and passivated wafer surface obtained from step d; f) performing a planarization process to planarize said third dielectric layer obtained from step e; g) performing an overall etch-back process to uniformly reduce said planarized dielectric layer thickness until said ohmic contact layer on the semiconductor ridge top being uniformly exposed; and h) depositing a first metal layer and a second metal layer, said first metal layer being in contact with said exposed ohmic contact layer on the semiconductor ridge top obtained from step g for serving as an electrode on the wafer surface, while said second metal layer being deposited on the polished wafer back side for serving as an electrode on the wafer back side.
申请日期	2002-05-07
专利号	US6503770
专利状态	失效
申请号	US10/139346
公开（公告）号	US6503770
IPC 分类号	H01S5/00 \| H01S5/223 \| H01S5/042 \| H01S5/20 \| H01S5/22 \| H01L21/00
专利代理人	-
代理机构	RABIN & BERDO,P.C.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45815
专题	半导体激光器专利数据库
作者单位	CHUNGHWA TELECOM CO., LTD.
推荐引用方式 GB/T 7714	HO, CHONG-LONG,LIN, CHIA-JU,HO, WEN-JENG,et al. Self-aligned fabrication method for ridge-waveguide semiconductor laser. US6503770[P]. 2003-01-07.

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