Nitride based semiconductor device and fabrication method for the same

OPT OpenIR > 半导体激光器专利数据库

	Nitride based semiconductor device and fabrication method for the same
其他题名	Nitride based semiconductor device and fabrication method for the same
	NAKAGAWA, DAISUKE; TANAKA, YOSHINORI; MURAYAMA, MASAHIRO; FUJIMORI, TAKAO; KOHDA, SHINICHI
	2012-03-27
专利权人	ROHM CO., LTD.
公开日期	2012-03-27
授权国家	美国
专利类型	授权发明
摘要	A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided.
其他摘要	氮化物基半导体器件包括：n型包覆层; n型GaN基导电层置于n型包覆层上;有源层放置在n型GaN基引导层上; p型GaN基导电层放置在有源层上;电子阻挡层，位于p型GaN基导电层上;应力松弛层置于电子阻挡层上;并且在应力松弛层上放置p型包覆层，并且氮化物基半导体器件减轻了在电子阻挡层的影响下发生的应力，不影响电子阻挡层的光分布，降低了阈值电流，可以抑制可靠性的降低，可以抑制激光束发射端面的退化，可以改善远场图形，并且持久，并且还提供了该装置的制造方法。
主权项	A nitride based semiconductor device comprising: an n-type cladding layer; an n-type AlXInYGa1-X-YN (where 0<=X, 0<=Y, X+Y<=1) guide layer placed on the n-type cladding layer; an active layer placed on the n-type AlXInYGa1-X-YN (where 0<=X, 0<=Y, X+Y<=1) guide layer; a p-type guide layer placed on the active layer; a first p-type cladding layer placed on the p-type guide layer; an electron block layer placed on the first p-type cladding layer; and a second p-type cladding layer placed on the electron block layer.
申请日期	2009-03-04
专利号	US8144743
专利状态	授权
申请号	US12/379945
公开（公告）号	US8144743
IPC 分类号	H01S5/00
专利代理人	-
代理机构	RABIN & BERDO,PC
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45793
专题	半导体激光器专利数据库
作者单位	ROHM CO., LTD.
推荐引用方式 GB/T 7714	NAKAGAWA, DAISUKE,TANAKA, YOSHINORI,MURAYAMA, MASAHIRO,et al. Nitride based semiconductor device and fabrication method for the same. US8144743[P]. 2012-03-27.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
US8144743.PDF（7634KB）	专利		开放获取	CC BY-NC-SA	请求全文