Electrically pumped edge-emitting photonic bandgap semiconductor laser

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	Electrically pumped edge-emitting photonic bandgap semiconductor laser
其他题名	Electrically pumped edge-emitting photonic bandgap semiconductor laser
	LIN, SHAWN-YU; ZUBRZYCKI, WALTER J.
	2004-01-06
专利权人	NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA, LLC
公开日期	2004-01-06
授权国家	美国
专利类型	授权发明
摘要	A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.
其他摘要	描述了一种基于一维或二维光子带隙（PBG）结构的高效电泵浦边缘发射半导体激光器。使用在光子带隙区域中操作的一对PBG镜形成激光光学腔。通过围绕具有较低折射率包层的高折射率的有源半导体层来实现横向限制。包层在无源PBG镜和波导区中可以是电绝缘的，具有小的导电孔，用于有效地将注入泵电流引导到有源区中。有源层可包括量子阱结构。可以在无源区域中放松量子阱结构，以提供从有源区域有效提取激光。
主权项	An electrically pumped edge-emitting photonic bandgap semiconductor laser, comprising an active layer of semiconductor material defining a plane having an axial direction, the active layer comprising an array of dielectric-contrasting posts or holes having one-dimensional periodicity aligned substantially perpendicular to the plane of the active layer thereby providing a photonic bandgap, the periodic dielectric structure having an active region therein where the semiconductor material forms an active p-n junction having light emission and lasing wavelength within the photonic bandgap, the periodic dielectric structure providing a first photonic bandgap mirror and a second photonic bandgap mirror that define an optical cavity for axial confinement of the emitted light in the active region; at least two air gaps surrounding the active layer for optical confinement of the light emission in the lateral direction; at least two cladding layers enclosing the active layer for optical confinement of the light emission to the axial direction; and a positive electrode connected to the p-type material and a negative electrode connected to the n-type material for electrical pumping of the active region to achieve light emission from the p-n junction in the axial direction of the semiconductor, laser.
申请日期	2002-01-09
专利号	US6674778
专利状态	授权
申请号	US10/044488
公开（公告）号	US6674778
IPC 分类号	H01S5/00 \| H01S5/10 \| H01S5/34
专利代理人	-
代理机构	BIEG, KEVIN W.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45753
专题	半导体激光器专利数据库
作者单位	NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA, LLC
推荐引用方式 GB/T 7714	LIN, SHAWN-YU,ZUBRZYCKI, WALTER J.. Electrically pumped edge-emitting photonic bandgap semiconductor laser. US6674778[P]. 2004-01-06.

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