Tunable semiconductor diode laser with distributed reflection

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	Tunable semiconductor diode laser with distributed reflection
其他题名	Tunable semiconductor diode laser with distributed reflection
	KUINDERSMA, PIETER I.; VAN DONGEN, TEUNIS
	1991-02-19
专利权人	JDS UNIPHASE CORPORATION
公开日期	1991-02-19
授权国家	美国
专利类型	授权发明
摘要	A tunable semiconductor diode laser with distributed reflection (DBR semiconductor laser) having a wide wavelength range is a suitable transmitter or local oscillator in a receiver in heterodyne and coherent optical glass fiber communication systems. Such a diode includes, in addition to the Bragg section in which the Bragg reflection takes place, an active section in which the radiation-emitting active region is present. When such a semiconductor diode laser is further provided with a so-called phase section, tuning is possible over a large wavelength range within one oscillation mode. A laser which is continuously tunable over the whole wavelength range is obtained by provided a mechanism by which the intensity of radiation which is reflected at the junction between the active section and the phase section is made low with respect to the intensity of the radiation which returns from the phase section to the active section.
其他摘要	具有宽波长范围的分布反射（DBR半导体激光器）的可调谐半导体二极管激光器是外差和相干光学玻璃光纤通信系统中的接收器中的合适的发射器或本地振荡器。除了发生布拉格反射的布拉格部分之外，这种二极管还包括有源部分，其中存在发射辐射的有源区。当这种半导体二极管激光器还具有所谓的相位部分时，可以在一个振荡模式内在大波长范围内进行调谐。通过提供一种机制来获得在整个波长范围内连续可调的激光器，通过该机制，在有源部分和相位部分之间的结处反射的辐射强度相对于返回的辐射强度变低。从阶段到活动部分。
主权项	A tunable semiconductor diode laser with distributed reflection comprising a semiconductor body having a passive layer and in which a first radiation-conductive layer is present on said first passive layer and in which a strip-shaped resonant cavity is formed between two surfaces extending substantially perpendicularly to said layers and within which resonant cavity are juxtaposed a first section having a first current supply and an associated active region with a p-n junction which at sufficiently high current strength in the forward direction generates coherent electromagnetic radiation, which active region is situated within the amplification profile of the radiation-conductive layer, a second section having a second current supply by which the refractive index of a part of the radiation-conductive layer present within said second section can be varied, and a third section having a third current supply in which the part of the resonant cavity present within the said third section comprises a periodic variation of the refractive index in the longitudinal direction, characterized in that the semiconductor diode laser comprises means for making the relative intensity of that part of the radiation generated in the first section which is reflected at the junction between the first and the second section small with respect to the intensity of the radiation returning from the second section to the junction.
申请日期	1989-12-06
专利号	US4995048
专利状态	失效
申请号	US07/446740
公开（公告）号	US4995048
IPC 分类号	H01S5/00 \| H01S5/0625 \| H01S5/227 \| H01S3/19
专利代理人	-
代理机构	BIREN, STEVEN R.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45733
专题	半导体激光器专利数据库
作者单位	JDS UNIPHASE CORPORATION
推荐引用方式 GB/T 7714	KUINDERSMA, PIETER I.,VAN DONGEN, TEUNIS. Tunable semiconductor diode laser with distributed reflection. US4995048[P]. 1991-02-19.

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