Semiconductor laser devices utilizing light reflective metallic layers

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	Semiconductor laser devices utilizing light reflective metallic layers
其他题名	Semiconductor laser devices utilizing light reflective metallic layers
	CAPLAN, SANDOR; LAMORTE, MICHAEL F.
	1972-10-24
专利权人	RCA CORPORATION
公开日期	1972-10-24
授权国家	美国
专利类型	授权发明
摘要	A P-N junction semiconductor laser diode in which light reflective metallic layers are provided on the optically flat opposed surfaces of the diode. A transparent insulating coating having a particular thickness covers each of the semiconductor end surfaces. A thin metallic layer is disposed on each of the insulating layers. One of the metallic layers is sufficiently thick to totally reflect light emitted from the P-N junction, whereas the other metallic layer is such as to reflect approximately 99 percent of the radiated light. A transparent insulating material protects the exposed surfaces of each of the metallic layers.
其他摘要	一种P-N结半导体激光二极管，其中光反射金属层设置在二极管的光学平坦相对表面上。具有特定厚度的透明绝缘涂层覆盖每个半导体端面。薄金属层设置在每个绝缘层上。其中一个金属层足够厚以完全反射从P-N结发射的光，而另一个金属层则反射大约99％的辐射光。透明绝缘材料保护每个金属层的暴露表面。
主权项	In a semiconductor diode of the type wherein a pair of electrical connections are soldered to metal coatings on a pair of opposed surfaces of P and N regions, respectively, of said diode to provide means to bias said diode in the forward direction, whereby to cause said diode to emit radiant energy along a P-N junction plane, said diode having two opposed planar ends transverse to, and including, said P-N junction plane, the improvement comprising a first layer of radiant-energy transmitting, electrically insulating material on one of said ends, said first layer having a thickness on the order of .lambda./2n, where .lambda. is the wavelength of said radiant energy and n is the index of refraction of said insulating material, a second layer of a light-reflective metal on said first layer, said second layer having a thickness to substantially reflect said radiant energy, and a third protective layer of electrically insulating material comprising silicon monoxide, silicon dioxide or silicon nitride on said second layer.
申请日期	1966-08-16
专利号	US3701047
专利状态	失效
申请号	US1966572845
公开（公告）号	US3701047
IPC 分类号	H01S5/00 \| H01S5/028 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45728
专题	半导体激光器专利数据库
作者单位	RCA CORPORATION
推荐引用方式 GB/T 7714	CAPLAN, SANDOR,LAMORTE, MICHAEL F.. Semiconductor laser devices utilizing light reflective metallic layers. US3701047[P]. 1972-10-24.

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