Multiple-wavelength laser diode array using quantum well band filling

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	Multiple-wavelength laser diode array using quantum well band filling
其他题名	Multiple-wavelength laser diode array using quantum well band filling
	BOUR, DAVID P.; BRINGANS, ROSS D.
	1999-11-09
专利权人	XEROX CORPORATION
公开日期	1999-11-09
授权国家	美国
专利类型	授权发明
摘要	A multiple-wavelength laser diode array is described. A wavelength span of several tens of nanometers is achieved through band-filling of a quantum well active region. A multiple-wavelength array is formed by selectively introducing different amounts of optical loss into the array elements, to affect the threshold current density. With minimum losses, the laser oscillates at a long wavelength, while an element with high loss will undergo more bandfilling and be forced to emit at a shorter wavelength. To illustrate the structures which incorporate these additional, selective losses, a 2-red-wavelength AlGaInP laser array is described. In preferred embodiments, increased optical loss is achieved in an SBR type laser by narrowing the ridge region, or by reducing its thickness. In another type of laser, increased optical loss is achieved by a very thin upper cladding layer causing increased optical absorption in a close overlying cap or metal layer.
其他摘要	描述了一种多波长激光二极管阵列。通过量子阱有源区的带填充实现几十纳米的波长跨度。通过选择性地将不同量的光学损耗引入阵列元件中来形成多波长阵列，以影响阈值电流密度。在最小损耗的情况下，激光器以长波长振荡，而具有高损耗的元件将经历更多的带填充并被迫以更短的波长发射。为了说明包含这些附加的选择性损耗的结构，描述了2红色波长的AlGaInP激光器阵列。在优选实施例中，通过缩小脊区域或通过减小其厚度，在SBR型激光器中实现增加的光学损耗。在另一种类型的激光器中，通过非常薄的上包层实现增加的光学损耗，从而在紧密覆盖的帽或金属层中引起增加的光学吸收。
主权项	A multiple wavelength laser diode array comprising: (a) a common semiconductor body comprising at least first and second side-by-side diode lasers each comprising an elongated ridge region flanked by elongated wing regions to define in or below the ridge region a lasing region, (b) active layers of the same composition extending in the body below the wing and ridge regions wherein the active layers form a quantum well, (c) said wing regions being constituted of regrown semiconductor material which creates a lower modal index of refraction than that of the ridge region forming diode lasers of the SBR type, (d) the cross-section of the ridge region in the first laser being larger than the ridge region cross-section in the second laser, whereby the first laser operates at a longer wavelength .lambda..sub.1 and the second laser operates at a shorter wavelength .lambda..sub.2 due to a greater outcoupling loss to the wing regions flanking the ridge region in the second laser, and the difference between said wavelength .lambda..sub.1 and the wavelength .lambda..sub.2 is in the order of at least tens of nanometers, wherein the larger cross-section of the first laser ridge region is formed by a larger vertical depth h.sub.1 of the first laser ridge region compared with the vertical depth h.sub.2 of the second laser ridge region.
申请日期	1997-03-17
专利号	US5982799
专利状态	失效
申请号	US08/818264
公开（公告）号	US5982799
IPC 分类号	H01S5/40 \| H01S5/00 \| H01S5/32 \| H01S5/10 \| H01S5/223 \| H01S3/23 \| H01S3/19
专利代理人	-
代理机构	OLIFF & BERRIDGE,PLC
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45720
专题	半导体激光器专利数据库
作者单位	XEROX CORPORATION
推荐引用方式 GB/T 7714	BOUR, DAVID P.,BRINGANS, ROSS D.. Multiple-wavelength laser diode array using quantum well band filling. US5982799[P]. 1999-11-09.

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