Xi'an Institute of Optics and Precision Mechanics,CAS
| Long-wavelength photonic device with GaAsSb quantum-well layer | |
| 其他题名 | Long-wavelength photonic device with GaAsSb quantum-well layer |
| CHANG, YING-LAN; CORZINE, SCOTT W.; DUPUIS, RUSSELL D.; NOH, MIN SOO; RYOU, JAE HYUN; TAN, MICHAEL R. T.; TANDON, ASHISH | |
| 2004-03-23 | |
| 专利权人 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 公开日期 | 2004-03-23 |
| 授权国家 | 美国 |
| 专利类型 | 授权发明 |
| 摘要 | The long-wavelength photonic device comprises an active region that includes at least one quantum-well layer of a quantum-well layer material that comprises InyGa1-yAsSb in which y>=0, and that additionally includes a corresponding number of barrier layers each of a barrier layer material that includes gallium and phosphorus. The barrier layer material has a conduction-band energy level greater than the conduction-band energy level of the quantum-well layer material and has a valence-band energy level less than the valence-band energy level of the quantum-well layer material. |
| 其他摘要 | 该长波长光子器件包括有源区，该有源区包括量子阱层材料的至少一个量子阱层，该量子阱层材料包括其中y> = 0的InyGa1-yAsSb，并且另外包括相应数量的阻挡层，每个阻挡层材料，包括镓和磷。阻挡层材料具有大于量子阱层材料的导带能级的导带能级，并且具有小于量子阱层材料的价带能级的价带能级。 |
| 主权项 | A long-wavelength photonic device, comprising an active region including: at least one quantum-well layer of a quantum-well layer material comprising In.sub.y Ga.sub.1-y AsSb in which y.gtoreq.0; and a corresponding number of barrier layers with which the at least one quantum well layer is interleaved, each of the barrier layers of a barrier layer material including gallium and phosphorus, the barrier layer material having a conduction-band energy level greater than the conduction-band energy level of the quantum-well layer material and a valence-band energy level less than the valence-band energy level of the quantum-well layer material. |
| 申请日期 | 2002-02-28 |
| 专利号 | US6711195 |
| 专利状态 | 授权 |
| 申请号 | US10/087422 |
| 公开（公告）号 | US6711195 |
| IPC 分类号 | H01S5/343 | H01S5/00 | H01S5/34 | H01L33/00 | H01S5/183 |
| 专利代理人 | - |
| 代理机构 | HARDCASTLE, IAN |
| 文献类型 | 专利 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/45707 |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 推荐引用方式 GB/T 7714 | CHANG, YING-LAN,CORZINE, SCOTT W.,DUPUIS, RUSSELL D.,et al. Long-wavelength photonic device with GaAsSb quantum-well layer. US6711195[P]. 2004-03-23. |
| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
| US6711195.PDF（286KB） | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 | ||
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