Integrated semiconductor laser with electronic directivity and focusing control

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	Integrated semiconductor laser with electronic directivity and focusing control
其他题名	Integrated semiconductor laser with electronic directivity and focusing control
	CHANG, SHELDON S. L.
	1993-08-03
专利权人	RESEARCH FOUNDATION OF STATE UNIVERSITY OF NEW YORK, THE
公开日期	1993-08-03
授权国家	美国
专利类型	授权发明
摘要	An integrated semiconductor laser device includes electronic direction and focusing control. The integrated semiconductor laser device may be used for either transmitting output laser beams or as a laser amplifier for receiving incoming laser beams. The direction and focusing control of the device operates by applying electric current to electrodes coupled to an active channel within an extension chamber of the integrated semiconductor laser device. The applied currents inject a minority carrier density distribution into the active channel. Since the speed of light within a semiconductor changes with minority carrier density distribution, a laser beam wave front may be shaped by the injected minority carrier density distribution to direct and/or focus a laser light beam. The direction and focusing control is completely integrated within the semiconductor laser device and time constants for the electronic direction and focusing control are in nanoseconds.
其他摘要	集成半导体激光器件包括电子方向和聚焦控制。集成半导体激光器件可用于传输输出激光束或用作接收入射激光束的激光放大器。通过向耦合到集成半导体激光器件的扩展腔室内的有源沟道的电极施加电流来操作器件的方向和聚焦控制。施加的电流将少数载流子密度分布注入有源沟道。由于半导体内的光速随着少数载流子密度分布而变化，因此激光束波前可以通过注入的少数载流子密度分布来成形，以引导和/或聚焦激光束。方向和聚焦控制完全集成在半导体激光器件内，电子方向和聚焦控制的时间常数以纳秒为单位。
主权项	An integrated semiconductor laser device, comprising: a lasing section having a first end facet and an internal port, and means defining a resonant cavity comprising a first semiconductor material situated between and coupled to the first end facet and the internal port; and an extension chamber having a second end facet and means defining an active channel comprising a second semiconductor material situated between and in communication with the internal port and the second end facet, the extension chamber having at least one electrode coupled to the active channel for applying a current to the active channel for injecting a minority carrier density distribution within the active channel for controlling laser light.
申请日期	1992-04-29
专利号	US5233623
专利状态	失效
申请号	US07/875387
公开（公告）号	US5233623
IPC 分类号	H01S5/40 \| H01S5/10 \| H01S5/00 \| H01S5/50 \| H01S5/042 \| H01S5/062 \| H01S5/20 \| H01S3/19
专利代理人	-
代理机构	HOFFMANN & BARON
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45676
专题	半导体激光器专利数据库
作者单位	RESEARCH FOUNDATION OF STATE UNIVERSITY OF NEW YORK, THE
推荐引用方式 GB/T 7714	CHANG, SHELDON S. L.. Integrated semiconductor laser with electronic directivity and focusing control. US5233623[P]. 1993-08-03.

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