Semiconductor distributed feedback laser diode

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	Semiconductor distributed feedback laser diode
其他题名	Semiconductor distributed feedback laser diode
	CONNOLLY, JOHN C.; ABELES, JOSEPH H.; MORRIS, NANCY A.
	1997-04-08
专利权人	TRUMPF PHOTONICS, INC.
公开日期	1997-04-08
授权国家	美国
专利类型	授权发明
摘要	A distributed-feed back semiconductor laser diode comprises a substrate of n-type conductivity GaAs having a pair of opposed surfaces, a pair of sides and a pair of ends. In sequence on one of the opposed surfaces are a first clad layer of n-type conductivity graded AlGaAs; a first confining layer of undoped AlGaAs; a first quantum well layer of undoped GaAs; a barrier layer of undoped AlGaAs; a second quantum well layer of undoped GaAs; a second confining layer of undoped AlGaAs; a spacer layer of p-type conductivity graded AlGaAs; a plurality of spaced, parallel grating bars of p-type conductivity AlGaAs extending across the spacer layer parallel to the ends of the substrate; a second clad layer of p-type conductivity graded AlGaAs over and between the grating bars; and contact layer of p+ type conductivity GaAs. A first conductive contact layer contacts the contact layer and a second conductive contact layer is on the other opposed surface of the substrate. The dual quantum well layers of undoped GaAs provide a laser diode which emits visible radiation at a wavelength less than 880 nm.
其他摘要	分布反馈半导体激光二极管包括具有一对相对表面，一对侧面和一对端部的n型导电性GaAs衬底。在一个相对的表面上依次是n型导电性梯度AlGaAs的第一包层;第一个未掺杂的AlGaAs限制层;未掺杂GaAs的第一量子阱层;未掺杂AlGaAs的阻挡层;未掺杂GaAs的第二量子阱层;第二个未掺杂AlGaAs限制层; p型电导率梯度AlGaAs的间隔层;多个间隔开的，平行的p型导电AlGaAs光栅条，横跨间隔层平行于衬底的端部延伸;在光栅条之上和之间的第二p型电导率梯度AlGaAs包层;和p +型导电性GaAs的接触层。第一导电接触层与接触层接触，第二导电接触层在基板的另一相对表面上。未掺杂GaAs的双量子阱层提供激光二极管，其发射波长小于880nm的可见辐射。
主权项	A semiconductor laser diode comprising: a substrate of a semiconductor material of a first conductivity type having first and second opposed surfaces; a first clad layer of a semiconductor material of the first conductivity type on the first surface of the substrate; a confining layer of an undoped semiconductor material on the first clad layer; a first quantum well layer of undoped semiconductor material on the first confining layer; a barrier layer of undoped semiconductor material on the first quantum well layer; a second quantum well layer of an undoped semiconductor material on the barrier layer; a second confining layer of an undoped semiconductor material on the second quantum well layer; a spacer layer of a semiconductor material of a second conductivity type opposite that of the first conductivity type on the second confining layer; a plurality of spaced, parallel grating bars of a semiconductor material of said second conductivity type on and extending across the spacer layer; a second clad layer of a semiconductor material of said second conductivity type on and between the grating bars; a cap layer of highly a highly conductive semiconductor material of the second conductivity type on the second clad layer; a first conductive contact on the cap layer; and a second conductive contact on the second surface of the substrate; the first and second clad layers, first and second confining layers, barrier layer, spacer layer and grating bars being of AlGaAs, and the quantum well layers and the cap layer each being substantially of GaAs; each of the clad layers being of graded AlGaAs with the first clad layer having a lower content of aluminum at the surface of the substrate than at the first confining layer and the second clad layer having a higher content of aluminum at the cap layer than at the spacer layer.
申请日期	1995-09-08
专利号	US5619523
专利状态	失效
申请号	US08/524956
公开（公告）号	US5619523
IPC 分类号	H01S5/00 \| H01S5/12 \| H01S5/343 \| H01S3/18
专利代理人	-
代理机构	BURKE, WILLIAM J.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45652
专题	半导体激光器专利数据库
作者单位	TRUMPF PHOTONICS, INC.
推荐引用方式 GB/T 7714	CONNOLLY, JOHN C.,ABELES, JOSEPH H.,MORRIS, NANCY A.. Semiconductor distributed feedback laser diode. US5619523[P]. 1997-04-08.

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