Method and apparatus for long wavelength semiconductor lasers

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	Method and apparatus for long wavelength semiconductor lasers
其他题名	Method and apparatus for long wavelength semiconductor lasers
	DAPKUS, PAUL DANIEL
	2003-09-16
专利权人	JDS UNIPHASE CORPORATION
公开日期	2003-09-16
授权国家	美国
专利类型	授权发明
摘要	A W quantum well structure for active region of semiconductor lasers for long wavelength emission of photons. The energy band lineups in the disclosed heterostructures achieve emission at wavelengths of 3 mum or greater. The W quantum well structure and exemplary materials can be applied to any semiconductor laser including a vertical cavity surface emitting laser (VCSEL). The active region is comprised of one or more sets of triad layers of GaAs1-xNx/GaAs1-ySby/GaAs1-xNx to provide the W quantum well structure. The energy band of these materials provides a staggered band alignment which causes electrons and holes to be confined in adjacent layers to one another. Because the wavefunctions associated with these materials tunnel into adjacent layers, optical emission at a longer wavelength is achievable than otherwise available from the energy gaps of the constituent materials alone.
其他摘要	用于长波长发射光子的半导体激光器有源区的W量子阱结构。所公开的异质结构中的能带阵列实现了在3μm或更大的波长下的发射。 W量子阱结构和示例性材料可以应用于包括垂直腔表面发射激光器（VCSEL）的任何半导体激光器。有源区由一组或多组GaAs1-xNx / GaAs1-ySby / GaAs1-xNx三元组层组成，以提供W量子阱结构。这些材料的能带提供了交错的带对准，这使得电子和空穴彼此限制在相邻的层中。因为与这些材料相关的波函数隧穿到相邻层中，所以可以实现比单独的组成材料的能隙可获得的更长波长的光发射。
主权项	A semiconductor laser for emitting photons at relatively long wavelengths, the semiconductor laser comprising: a semiconductor substrate; one or more sets of a triad of active layers over the semiconductor substrate, the one or more sets of the triad of active layers forming a W quantum well structure to provide carrier confinement for lasing, the W quantum well structure having a conduction band shaped similar to a letter W near a light emitting region to emit photons at relatively long wavelengths; an optical confinement region formed around the one or more sets of the triad of active layers, the optical confinement region to confine photons to an active region within the one or more sets of the triad of active layers; and a first contact terminal and a second contact terminal, the first contact terminal joined to a surface of the semiconductor laser to allow emission of photons therefrom, the second contact terminal joined to the semiconductor substrate.
申请日期	1999-10-15
专利号	US6621842
专利状态	失效
申请号	US09/419318
公开（公告）号	US6621842
IPC 分类号	H01S5/343 \| H01S5/183 \| H01S5/00 \| H01S5/323 \| H01S5/34
专利代理人	-
代理机构	BLAKLEY SOKOLOFF TAYLOR & ZAFMAN
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45564
专题	半导体激光器专利数据库
作者单位	JDS UNIPHASE CORPORATION
推荐引用方式 GB/T 7714	DAPKUS, PAUL DANIEL. Method and apparatus for long wavelength semiconductor lasers. US6621842[P]. 2003-09-16.

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