Visible-wavelength semiconductor lasers and arrays

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	Visible-wavelength semiconductor lasers and arrays
其他题名	Visible-wavelength semiconductor lasers and arrays
	SCHNEIDER, JR., RICHARD P.; CRAWFORD, MARY H.
	1996-09-17
专利权人	ENERGY, UNITED STATES DEPARTMENT OF
公开日期	1996-09-17
授权国家	美国
专利类型	授权发明
摘要	A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1 lambda ) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.
其他摘要	可见半导体激光器。可见半导体激光器包括InAlGaP有源区，其每侧由一个或多个AlGaAs层围绕，碳作为唯一的p型掺杂剂。提供本发明的实施例作为垂直腔表面发射激光器（VCSEL）和边缘发射激光器（EEL）。可以在InAlGaP有源区和AlGaAS DBR反射镜或限制层之间提供由基本上不含铟的半导体合金（例如AlAsP，AlGaAsP等）构成的一个或多个过渡层，以通过减少任何频带来改善载流子注入和器件效率偏移。根据本发明制造的具有单波长厚（1λ）光学腔的可见VCSEL器件操作连续波（cw），激光输出功率高达8mW，峰值功率转换效率高达11％。
主权项	A semiconductor laser for emitting light at a visible wavelength comprising: (a) a compound semiconductor substrate; (b) at least one first-grown AlGaAs semiconductor layer formed above the substrate and having a first conductivity type; (c) an active region comprised of InAlGaP formed above the first-grown AlGaAs layer; (d) at least one last-grown AlGaAs semiconductor layer formed above the active region and having a second conductivity type opposite the first conductivity type, one of the conductivity types being defined as p-type by carbon, and the other conductivity type being defined as n-type to form a semiconductor junction about the active region; (e) electrodes above and below the semiconductor junction for electrically activating the laser.
申请日期	1995-05-19
专利号	US5557627
专利状态	失效
申请号	US08/444462
公开（公告）号	US5557627
IPC 分类号	H01S5/343 \| H01S5/30 \| H01S5/183 \| H01S5/00 \| H01S5/32 \| H01S5/20 \| H01S3/19
专利代理人	-
代理机构	HOHIMER, JOHN P. CONE, GREGORY A.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45470
专题	半导体激光器专利数据库
作者单位	ENERGY, UNITED STATES DEPARTMENT OF
推荐引用方式 GB/T 7714	SCHNEIDER, JR., RICHARD P.,CRAWFORD, MARY H.. Visible-wavelength semiconductor lasers and arrays. US5557627[P]. 1996-09-17.

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