Semiconductor device having superlattice structure

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	Semiconductor device having superlattice structure
其他题名	Semiconductor device having superlattice structure
	DIL, JAN G.
	1986-07-29
专利权人	U.S. PHILIPS CORPORATION 100 EAST 42ND STREET NEW YORK NY 10017 A CORP OF
公开日期	1986-07-29
授权国家	美国
专利类型	授权发明
摘要	When two indirect only slightly different semiconductor materials having a suitable band gap, for example, AlAs and Al0.8Ga0.2As, are grown epitaxially one onto the other in layers of a few unit cell layers thick, the electronic band structures are folded so that the indirect minimum of the conduction band is displaced from the edge of the Brillouin zone to the center. The two indirect materials then constitute a superlattice with a band transition with a band gap of 2.2 eV.
其他摘要	当具有合适带隙的两种间接仅略微不同的半导体材料（例如，AlAs和Al0.8Ga0.2As）以几个单位单元层厚的层外延地生长在另一个上时，电子带结构被折叠，使得导带的间接最小值从布里渊区域的边缘移位到中心。然后，这两种间接材料构成具有带隙转变的超晶格，带隙为2.2eV。
主权项	A semiconductor device comprising a semiconductor body provided with a superlattice configuration which alternately comprises first layers of an indirect semiconductor material A.sup.III -B.sup.V and second layers of a mixed crystal (alloy) of the same material, in which one of the elements A and B is partly replaced by an equivalent element C, in which the superlattice exhibits at least in a direction at right angles to the interfaces between the layers a direct band transition due to zone folding, the element C and the concentration thereof being chosen so that the layers have substantially equal lattice constants at least in a direction parallel to the interfaces and the sum of the thicknesses of two successive layers in the superlattice being at most about 5.0 nm.
申请日期	1984-05-07
专利号	US4603340
专利状态	失效
申请号	US06/607904
公开（公告）号	US4603340
IPC 分类号	H01L29/02 \| H01S5/00 \| H01L33/00 \| H01L29/15 \| H01S5/343 \| H01L21/203 \| H01L33/06 \| H01L27/12
专利代理人	-
代理机构	MAYER, ROBERT T. BIREN, STEVEN R.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44705
专题	半导体激光器专利数据库
作者单位	U.S. PHILIPS CORPORATION 100 EAST 42ND STREET NEW YORK NY 10017 A CORP OF
推荐引用方式 GB/T 7714	DIL, JAN G.. Semiconductor device having superlattice structure. US4603340[P]. 1986-07-29.

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