Method of fabricating modulator integrated semiconductor laser device

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	Method of fabricating modulator integrated semiconductor laser device
其他题名	Method of fabricating modulator integrated semiconductor laser device
	TADASHI, KIMURA; YUTAKA, MIHASHI; KATUHIKO, GOTOH; TAKUSHI, ITAGAKI
	1997-08-13
专利权人	MITSUBISHI DENKI KABUSHIKI KAISHA
公开日期	1997-08-13
授权国家	英国
专利类型	授权发明
摘要	In a method of fabricating a modulator integrated semiconductor laser device, a semiconductor layer (4) having first and second regions (A, B) of different crystal compositions is produced on each chip region (101) of a semiconductor wafer (100) by a selective crystal growth using, as a mask, a dielectric film (2a, 2b) having a prescribed pattern (101a). Thereafter, a semiconductor laser and a light modulator that modulates the intensity of laser light emitted from the semiconductor layer are produced in the first semiconductor region and the second semiconductor region, respectively. In this method, the shape of the dielectric mask pattern (2a, 2b) and the shape of the opening (1a) of the mask pattern on each chip region is symmetrical with those on adjacent chip region in the optical waveguide direction of the semiconductor laser.; Therefore, the semiconductor layer is grown on the wafer so that the first and second semiconductor regions of different crystal compositions on each chip region are in contact with the semiconductor region of the same crystal composition on adjacent chip region. As the result, at opposite edges of the chip region in the optical waveguide direction, the crystal compositions of the first and second semiconductor regions are made uniform.
其他摘要	在制造调制器集成半导体激光器件的方法中，在半导体晶片（100）的每个芯片区域（101）上产生具有不同晶体组成的第一和第二区域（A，B）的半导体层（4）。使用具有规定图案（101a）的介电膜（2a，2b）作为掩模的选择性晶体生长。此后，分别在第一半导体区域和第二半导体区域中产生半导体激光器和调制从半导体层发射的激光强度的光调制器。在该方法中，每个芯片区域上的电介质掩模图案（2a，2b）的形状和掩模图案的开口（1a）的形状与半导体激光器的光波导方向上的相邻芯片区域上的那些对称。。因此，在晶片上生长半导体层，使得每个芯片区域上的不同晶体组成的第一和第二半导体区域与相邻芯片区域上的相同晶体组分的半导体区域接触。结果，在光波导方向上的芯片区域的相对边缘处，使第一和第二半导体区域的晶体组成均匀。
主权项	1 A method of fabricating a modulator integrated semiconductor laser device (Figs 1 (a) and 1 (b)) including: preparing a semiconductor wafer ( 100) having a plurality of chip regions ( 101); forming a semiconductor layer having first and second semiconductor regions of different crystal- compositions on each chip region of the semiconductor wafer by a selective crystal growth using a dielectric film having a prescribed pattern as a mask; and forming a semiconductor laser in the first region of the semiconductor layer and a light modulator, that modulates the intensity of laser light emitted from the semiconductor laser, in the second region of the semiconductor layer; which method is characterized by: said dielectric mask pattern on each chip region ( 101) having a pair of dielectric films ( 2 a and 2 b) and an opening (la) that are arranged symmetrically with respect to those on adjacent chip region in what becomes the optical waveguide direction of the semiconductor laser.
申请日期	1994-08-18
专利号	GB2281441B
专利状态	失效
申请号	GB1994016776
公开（公告）号	GB2281441B
IPC 分类号	H01L \| H01S5/026 \| H01S \| H01L27/15 \| H01S5/10 \| H01S5/00 \| H01S5/20 \| H01L33/00 \| H01S3/025 \| G02F1/015
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44691
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	TADASHI, KIMURA,YUTAKA, MIHASHI,KATUHIKO, GOTOH,et al. Method of fabricating modulator integrated semiconductor laser device. GB2281441B[P]. 1997-08-13.

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