Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor optical devices with differential grating structure and method for manufacturing the same | |
其他题名 | Semiconductor optical devices with differential grating structure and method for manufacturing the same |
PARK, KYUNG-HYUN; SONG, JUNG-HO; KIM, SUNG-BOCK; OH, KWANG-RYONG | |
2005-04-26 | |
专利权人 | INTELLECTUAL DISCOVERY CO. LTD. |
公开日期 | 2005-04-26 |
授权国家 | 美国 |
专利类型 | 授权发明 |
摘要 | A semiconductor optical device with a differential grating formed by a holography method and a method for manufacturing the same are provided. The provided semiconductor optical device includes an n-type InP substrate, a stack structure on the InP substrate having a waveguide and active layers, a first grating formed under the stack structure and on the InP substrate, and a second grating formed on the stack structure. The provided method for manufacturing the semiconductor optical device forms a first grating on the n-type InP substrate and under the active layer, and forms a second grating on the active layer. The first and second gratings are formed by the holography method. |
其他摘要 | 提供了一种具有通过全息方法形成的差分光栅的半导体光学器件及其制造方法。所提供的半导体光学器件包括n型InP衬底,InP衬底上具有波导和有源层的堆叠结构,形成在堆叠结构下面和InP衬底上的第一光栅,以及形成在堆叠结构上的第二光栅。所提供的制造半导体光学器件的方法在n型InP衬底上和有源层下形成第一光栅,并在有源层上形成第二光栅。第一和第二光栅通过全息方法形成。 |
主权项 | A semiconductor optical device comprising: a resonator having three regions comprising reflective, optical gain, and phase control regions, wherein at least one region of the reflective and optical gain regions includes: an n-type InP substrate; a stack structure on the InP substrate including a waveguide and active layers; a first grating formed under the stack structure and on the InP substrate; and a second grating formed on the stack structure. |
申请日期 | 2002-10-25 |
专利号 | US6885804 |
专利状态 | 授权 |
申请号 | US10/280691 |
公开(公告)号 | US6885804 |
IPC 分类号 | G02B6/124 | H01S5/00 | H01S5/12 | H01L33/00 | H01S5/10 | G02B6/10 |
专利代理人 | - |
代理机构 | BLAKELY SOKOLOFF TAYLOR & ZAFMAN |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/44668 |
专题 | 半导体激光器专利数据库 |
作者单位 | INTELLECTUAL DISCOVERY CO. LTD. |
推荐引用方式 GB/T 7714 | PARK, KYUNG-HYUN,SONG, JUNG-HO,KIM, SUNG-BOCK,et al. Semiconductor optical devices with differential grating structure and method for manufacturing the same. US6885804[P]. 2005-04-26. |
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US6885804.PDF(133KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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