Passive waveguide structure with alternating GaInAs/AlInAs layers for mid-infrared optoelectronic devices

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	Passive waveguide structure with alternating GaInAs/AlInAs layers for mid-infrared optoelectronic devices
其他题名	Passive waveguide structure with alternating GaInAs/AlInAs layers for mid-infrared optoelectronic devices
	CANEAU, CATHERINE GENEVIEVE; XIE, FENG; ZAH, CHUNG-EN
	2016-01-05
专利权人	THORLABS QUANTUM ELECTRONICS, INC.
公开日期	2016-01-05
授权国家	美国
专利类型	授权发明
摘要	Disclosed is a semiconductor optical emitter having an optical mode and a gain section, the emitter comprising a low loss waveguide structure made of two alternating layers of semiconductor materials A and B, having refractive indexes of Na and Nb, respectively, with an effective index No of the optical mode in the low loss waveguide between Na and Nb, wherein No is within a 5% error margin of identical to a refractive index of the gain section and wherein the gain section is butt-jointed with the low loss waveguide, and wherein the size and shape of the optical mode(s) in the low loss waveguide and gain section are within a 10% error margin of equal. Desirably, at least one of the semiconductor materials A and B has a sufficiently large band gap that the passive waveguide structure blocks current under a voltage bias of 15 V.
其他摘要	公开了一种具有光学模式和增益部分的半导体光学发射器，该发射器包括由两个交替的半导体材料层A和B制成的低损耗波导结构，其分别具有Na和Nb的折射率，有效折射率N在Na和Nb之间的低损耗波导中的光学模式的 o ，其中No在与增益部分的折射率相同的5％误差范围内，并且其中增益部分是对接的具有低损耗波导，并且其中低损耗波导和增益部分中的光学模式的尺寸和形状在10％的误差范围内相等。理想地，半导体材料A和B中的至少一个具有足够大的带隙，使得无源波导结构在15V的电压偏置下阻挡电流。
主权项	A semiconductor optical emitter having an optical mode and a gain section, the emitter comprising a low loss waveguide structure made of two alternating layers of semiconductor materials A and B, having refractive indexes of Na and Nb, respectively, with an effective index No of the optical mode in the low loss waveguide between Na and Nb, wherein No is within a 5% error margin of identical to a refractive index of the gain section, wherein the gain section is butt-jointed with the low loss waveguide, and wherein the size and shape of the optical mode(s) in the low loss waveguide and gain section are within a 10% error margin of equal.
申请日期	2015-02-23
专利号	US9231368
专利状态	授权
申请号	US14/628394
公开（公告）号	US9231368
IPC 分类号	H01S5/00 \| H01S5/02 \| H01S5/34 \| H01S5/26 \| H01S5/20 \| H01S5/026
专利代理人	-
代理机构	GRAHAM CURTIN, P.A.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44624
专题	半导体激光器专利数据库
作者单位	THORLABS QUANTUM ELECTRONICS, INC.
推荐引用方式 GB/T 7714	CANEAU, CATHERINE GENEVIEVE,XIE, FENG,ZAH, CHUNG-EN. Passive waveguide structure with alternating GaInAs/AlInAs layers for mid-infrared optoelectronic devices. US9231368[P]. 2016-01-05.

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