Phased array semiconductor laser

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	Phased array semiconductor laser
其他题名	Phased array semiconductor laser
	JEWELL, JACK L.; OLBRIGHT, GREG R.
	1995-08-29
专利权人	MOSS, JEROME S.
公开日期	1995-08-29
授权国家	美国
专利类型	授权发明
摘要	A phased array of semiconductor laser elements is provided in which the percentage of light which propagates into different diffractive orders is modified by an optical element. The diode laser includes a body of a semiconductor material having an active region therein which is adapted to generate radiation and emit the radiation form a surface of the body, and separate reflecting mirrors at opposite sides of the active region with at least one of the mirrors being partially transparent to the generated light to allow the light generated in the active region to be emitted therethrough. The optical element may take the form of a modification in the arrangement of the semiconductor laser elements, or an array of microprisms, or an external mirror to modify the percentage of light which propagates into different diffractive orders.
其他摘要	提供了一种相控阵列的半导体激光器元件，其中通过光学元件改变传播到不同衍射级的光的百分比。二极管激光器包括半导体材料的主体，其中具有有源区域，该有源区域适于产生辐射并从主体的表面发射辐射，并且在有源区域的相对侧处用至少一个镜子分开反射镜。对所产生的光部分透明，以允许在有源区域中产生的光通过其发射。光学元件可以采用半导体激光器元件的布置或微棱镜阵列或外部镜子的修改形式，以修改传播到不同衍射级的光的百分比。
主权项	A semiconductor laser comprising: an optical cavity having a first and second dimension, both perpendicular to said optical cavity; first and second mirrors, said mirrors defining said optical cavity; an active layer for providing optical gain; at least two separate lasing elements, said at least two lasing elements having different first dimensions or different second dimensions and separated by separation means, said separation means being patterned in substantially rectangular patterns, each of said lasing elements having an effective optical cavity length; means for emitting light beam elements from said lasing regions, said light beam elements characterized by amplitude and phase; and means for substantially phase-locking said light beam elements and thereby causing said light beam elements to collectively for a light beam.
申请日期	1993-11-05
专利号	US5446754
专利状态	失效
申请号	US08/147564
公开（公告）号	US5446754
IPC 分类号	H01S5/42 \| H01S5/00 \| H01S3/05 \| H01S3/10 \| H01S3/18
专利代理人	-
代理机构	FISHER & ASSOCIATES
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44583
专题	半导体激光器专利数据库
作者单位	MOSS, JEROME S.
推荐引用方式 GB/T 7714	JEWELL, JACK L.,OLBRIGHT, GREG R.. Phased array semiconductor laser. US5446754[P]. 1995-08-29.

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