Laser diode with high indium active layer and lattice matched cladding layer

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	Laser diode with high indium active layer and lattice matched cladding layer
其他题名	Laser diode with high indium active layer and lattice matched cladding layer
	BOUR, DAVID P.; CHUA, CHRISTOPHER L.; JOHNSON, NOBLE M.; YANG, ZHIHONG
	2011-08-16
专利权人	PALO ALTO RESEARCH CENTER INCORPORATED
公开日期	2011-08-16
授权国家	美国
专利类型	授权发明
摘要	A semiconductor laser diode with a high indium content is provided with a lattice matched cladding layer or layers. One or both of the cladding layers may comprise bulk aluminum gallium indium nitride in the ratio of AlxGa1-x-yInyN and/or a short period superlattice structures of, for example, a plurality of alternating layer pairs of aluminum gallium indium nitride in the ratio of AlxGa1-x-yInyN and gallium indium nitride in the ratio of GasIn1-sN, providing a multi-quantum barrier (MQB) effect. Lattice matching of the cladding layer(s) and active layer reduce or eliminate strain, and the materials chosen for the cladding layers optimizes optical and carrier confinement. Alternatively, the lattice parameters may be selected to provide strain balanced MQBs, e.g., where the barrier layers are tensile-strained and the well layers compressed.
其他摘要	具有高铟含量的半导体激光二极管设置有晶格匹配的包层或多个层。包层中的一个或两个可以包括Al x Ga 1-x-y N y N的比例的块状铝镓铟和/或短周期超晶格结构，例如，多个交替的铝镓铟铟层对的比例Al x Ga 1-x-yInyN和氮化镓铟的比例为GasIn1-sN，提供多量子势垒（MQB）效应。包层和有源层的晶格匹配减少或消除了应变，并且为包层选择的材料优化了光学和载流子限制。或者，可以选择晶格参数以提供应变平衡的MQB，例如，其中阻挡层是拉伸应变的并且阱层被压缩。
主权项	A semiconductor laser structure, comprising: a gallium nitride (GaN) template layer; a lower cladding layer formed over said gallium nitride (GaN) template layer, said lower cladding layer comprising at least aluminum gallium indium nitride (AlGaInN); an active layer comprised of gallium indium nitride (GaInN) formed over said lower cladding layer; and an upper cladding layer comprising at least aluminum gallium indium nitride (AlGaInN); whereby the active layer is substantially lattice matched to the lower cladding layer; and wherein at least one of said lower and said upper cladding layers comprise aluminum indium nitride substantially in the ratio of Al0.74In0.26N, and said active layer comprises a plurality of quantum well sublayers each comprising gallium indium nitride substantially in the ratio of Ga0.73In0.27N, each quantum well sublayer separated from another by a barrier sublayer comprising resin gallium indium nitride substantially in the ratio of Ga0.88In0.12N.
申请日期	2008-11-21
专利号	US8000366
专利状态	失效
申请号	US12/276173
公开（公告）号	US8000366
IPC 分类号	H01S5/00
专利代理人	-
代理机构	SMALL, JONATHAN A.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44538
专题	半导体激光器专利数据库
作者单位	PALO ALTO RESEARCH CENTER INCORPORATED
推荐引用方式 GB/T 7714	BOUR, DAVID P.,CHUA, CHRISTOPHER L.,JOHNSON, NOBLE M.,et al. Laser diode with high indium active layer and lattice matched cladding layer. US8000366[P]. 2011-08-16.

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