Multi quantum well grinsch detector

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	Multi quantum well grinsch detector
其他题名	Multi quantum well grinsch detector
	RAZEGHI, MANIJEH
	2002-10-01
专利权人	MP TECHNOLOGIES LLC
公开日期	2002-10-01
授权国家	美国
专利类型	授权发明
摘要	A p-i-n structure for use in photo laser diodes is disclosed, being formed of an GaxIn1-xN/GaN alloy (X=0->1). In the method of the subject invention, buffer layers of GaN are grown on a substrate and then doped. The active, confinement and confinement layers of p-type material are next grown and doped, if desired. The structure is masked and etched as required to expose a surface which is annealed. A p-type surface contact is formed on this annealed surface so as to be of sufficiently low resistance as to provide good quality performance for use in a device.
其他摘要	公开了一种用于光激光二极管的p-i-n结构，其由GaxIn1-xN / GaN合金（X = 0-> 1）形成。在本发明的方法中，GaN的缓冲层生长在衬底上然后掺杂。如果需要，接下来生长并掺杂p型材料的有源，限制和限制层。根据需要对结构进行掩模和蚀刻，以露出退火的表面。在该退火表面上形成p型表面接触，以便具有足够低的电阻，从而提供用于器件的良好质量性能。
主权项	A multi-quantum well laser diode comprising: a substrate, a buffer layer, a lower confinement layer, an active layer and an upper confinement layer; said upper confinement layer being doped with a p-dopant, said lower confinement layer being doped with a n-dopant; and said active layer being about 5 to about 30 period GRINSCH structure comprising a plurality of layers of Ga.sub.x In.sub.1-x N/GaN (0.ltoreq..times..ltoreq.1).
申请日期	2000-03-15
专利号	US6459096
专利状态	失效
申请号	US09/526134
公开（公告）号	US6459096
IPC 分类号	H01S5/343 \| H01S5/00 \| H01S5/34 \| H01S5/02 \| H01L33/00 \| H01S3/19
专利代理人	-
代理机构	WELSH & KATZ,LTD.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44486
专题	半导体激光器专利数据库
作者单位	MP TECHNOLOGIES LLC
推荐引用方式 GB/T 7714	RAZEGHI, MANIJEH. Multi quantum well grinsch detector. US6459096[P]. 2002-10-01.

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