Integration of surface emitting laser and photodiode for monitoring power output of surface emitting laser

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	Integration of surface emitting laser and photodiode for monitoring power output of surface emitting laser
其他题名	Integration of surface emitting laser and photodiode for monitoring power output of surface emitting laser
	LIN, HONG; YANG, LONG; TAN, MICHAEL R. T.; WANG, SHIH-YUAN
	1996-02-13
专利权人	HEWLETT-PACKARD COMPANY
公开日期	1996-02-13
授权国家	美国
专利类型	授权发明
摘要	The present invention provides a structure and method for integrating a photodiode and surface emitting laser on a substrate which minimizes both process complexity and exposure of epitaxial layers. In a first embodiment, a photodiode structure is integrated with the surface emitting laser simply by adding a separate Schottky contact to the surface of the SEL. In a second embodiment, a photodiode structure is integrated with the surface emitting laser by positioning a current isolation region between the photodiode and the SEL. The current isolation region should extend into a first mirror region but not into the light generation region of the active region so that the light generation region of the SEL is optically coupled to the light absorption region of the photodiode.
其他摘要	本发明提供了一种用于将光电二极管和表面发射激光器集成在基板上的结构和方法，其最小化了工艺复杂性和外延层的曝光。在第一实施例中，仅通过向SEL的表面添加单独的肖特基接触，将光电二极管结构与表面发射激光器集成在一起。在第二实施例中，通过在光电二极管和SEL之间定位电流隔离区域，光电二极管结构与表面发射激光器集成在一起。电流隔离区域应延伸到第一反射镜区域但不延伸到有源区域的光产生区域中，使得SEL的光产生区域光学耦合到光电二极管的光吸收区域。
主权项	An integrated light emitting device and photodetecting device comprising: an active region including a light generation region for generating light in response to light passing therethrough, the active region having a first side and a second opposite side, the light generation region emitting light in a first direction through a first surface; a second mirror region having a first side and a second opposite side, the second mirror region for reflecting light towards the light generation region, the second mirror region being located on the first side of the active region; a first mirror region having a first side and a second opposite side, the first mirror region for reflecting light towards the light generation region, the first side of the first mirror region being located on the second side of the active region; a substrate having a first side and a second opposite side, the first side of the substrate being located on the second side of the first mirror region; and a Schottky contact for detecting light emitted in the first direction, the Schottky contact being formed on the first surface.
申请日期	1994-10-31
专利号	US5491712
专利状态	失效
申请号	US08/332231
公开（公告）号	US5491712
IPC 分类号	H01S5/00 \| H01S5/026 \| H01S5/183 \| H01S5/20 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44476
专题	半导体激光器专利数据库
作者单位	HEWLETT-PACKARD COMPANY
推荐引用方式 GB/T 7714	LIN, HONG,YANG, LONG,TAN, MICHAEL R. T.,et al. Integration of surface emitting laser and photodiode for monitoring power output of surface emitting laser. US5491712[P]. 1996-02-13.

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