Non-regrowth distributed feedback ridge semiconductor laser and method of manufacturing the same

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	Non-regrowth distributed feedback ridge semiconductor laser and method of manufacturing the same
其他题名	Non-regrowth distributed feedback ridge semiconductor laser and method of manufacturing the same
	CHEN, NONG; WATANABE, YOSHIAKI; TAKEI, KOYOSHI; CHIKUMA, KIYOFUMI
	1999-11-09
专利权人	PIONEER ELECTRONIC CORPORATION
公开日期	1999-11-09
授权国家	美国
专利类型	授权发明
摘要	There is provided a method of manufacturing a DFB semiconductor laser in which a laser substrate having a cladding layer which is a material for a ridge stripe stacked on an active is formed. The cladding layer as a material for a ridge stripe is etched to form a ridge stripe having flat portions on both sides thereof and a flat top portion protruding therefrom. A protective film and a resist layer are formed to cover the flat portions on both sides and the flat upper surface. A latent image of a grating having a periodic structure is formed in the direction in which the ridge stripe extends is formed on the resist layer. The resist layer is developed and the flat portions on both sides are etched to form a grating on both lateral portions and to remove the protective film. An electrode is formed on the flat top portion, the interface between the ridge strip and the electrode being a smooth surface.
其他摘要	提供一种制造DFB半导体激光器的方法，其中形成具有包层的激光基板，该包层是堆叠在有源区上的脊条材料。作为脊条的材料的包层被蚀刻以形成脊条，该脊条在其两侧具有平坦部分，并且从其突出的平坦顶部。形成保护膜和抗蚀剂层以覆盖两侧的平坦部分和平坦的上表面。在抗蚀剂层上形成在脊条延伸的方向上形成具有周期结构的光栅的潜像。显影抗蚀剂层并蚀刻两侧的平坦部分以在两个横向部分上形成光栅并去除保护膜。在平坦顶部上形成电极，脊条和电极之间的界面是光滑表面。
主权项	A distributed feedback ridge semiconductor laser having a ridge stripe on an active layer and a periodic structure in a direction in which the ridge stripe extends, comprising: a laser substrate including a cladding layer made of a ridge stripe material and a contact layer stacked in order on an active layer; two lateral flat portions formed from said cladding layer and said contact layer; a ridge stripe protruding from said lateral flat portions and having a flat top portion; a protective film and a resist layer formed in order to cover said lateral flat portions and said flat top portion; a grating pattern formed on said resist layer by developing a latent image of a grating having a periodic structure in the direction in which the ridge stripe extends; a grating layer made of said ridge stripe material formed by etching said cladding layer and protective film according to said grating pattern in regions other than said flat top portion; an insulating layer formed on a surface of said grating layer such that said flat top portion is exposed; and an electrode formed on said flat top portion to produce an interface between said ridge stripe and said electrode, said interface being a smooth surface.
申请日期	1997-07-25
专利号	US5982804
专利状态	失效
申请号	US08/900171
公开（公告）号	US5982804
IPC 分类号	H01S5/22 \| H01S5/00 \| H01S5/12 \| H01S3/085 \| H01S3/19
专利代理人	-
代理机构	FISH & RICHARDSON P.C.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44474
专题	半导体激光器专利数据库
作者单位	PIONEER ELECTRONIC CORPORATION
推荐引用方式 GB/T 7714	CHEN, NONG,WATANABE, YOSHIAKI,TAKEI, KOYOSHI,et al. Non-regrowth distributed feedback ridge semiconductor laser and method of manufacturing the same. US5982804[P]. 1999-11-09.

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