Horizontal reactor for compound semiconductor growth

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	Horizontal reactor for compound semiconductor growth
其他题名	Horizontal reactor for compound semiconductor growth
	SHIN, HYUN KEEL
	2001-04-10
专利权人	HANVAC CORPORATION
公开日期	2001-04-10
授权国家	美国
专利类型	授权发明
摘要	Described is a horizontal reactor for processing GaN based semiconductors which achieves high quality epitaxial growth because no dust is produced through use of a ferrofluidic power transmission or gas flow to rotate its susceptor, elements from thermal decomposition of ammonia gas are provided separately at high temperatures at a position proximate the substrate so that premature reaction between ammonia ions and the reactant gases is avoided, and the reactor is constructed to suppress thermal convection attributed to heat from the susceptor which otherwise hinders smooth epitaxial growth.
其他摘要	描述了一种用于处理GaN基半导体的水平反应器，其实现了高质量的外延生长，因为通过使用铁磁流体动力传输或气流来旋转其基座不产生灰尘，来自氨气的热分解的元件在高温下单独提供。靠近基板的位置使得避免氨离子与反应气体之间的过早反应，并且构造反应器以抑制归因于来自基座的热量的热对流，否则会妨碍平滑的外延生长。
主权项	A horizontal reactor for compound semiconductor growth, comprising: (a) a susceptor adapted to hold a substrate on which a thin film for a semi-conductor grows; (b) an inner cell having an upper wall, a base wall, and side walls; said upper wall, said base wall and said side walls defining a reactant gas passage having two open ends; said upper wall having an inclined portion deriving laminar flow of reactant gases in a mid section of said upper wall; said base wall supporting said susceptor in a position opposite to said inclined portion; (c) an outer cell surrronding said inner cell; (d) an ammonia supply means for supplying ammonia gas to said reactant gas passage; (e) a reactant gas supply means communicating with a first end of said two open ends of said reactant gas passage and for supplying reactant gases except ammonia gas to said reactant gas passage; (f) a reactant gas vent means communicating with the second end of said two ends of said reactant gas passage and exhausting reactant gases out of said reactant gas passage; (g) an ammonia gas heating means for heating ammonia gas, and (h) a susceptor heating means for heating said susceptor.
申请日期	1999-01-18
专利号	US6214116
专利状态	失效
申请号	US09/232554
公开（公告）号	US6214116
IPC 分类号	C30B25/08 \| C30B25/02 \| C23C16/458 \| C30B25/14 \| H01L21/00 \| C23C16/44 \| C23C16/455 \| H01L21/205 \| H01L33/32 \| H01S5/00 \| H01S5/323 \| B05B5/00
专利代理人	-
代理机构	BAKER BOTTS L.L.P.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44470
专题	半导体激光器专利数据库
作者单位	HANVAC CORPORATION
推荐引用方式 GB/T 7714	SHIN, HYUN KEEL. Horizontal reactor for compound semiconductor growth. US6214116[P]. 2001-04-10.

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