Monolithic semiconductor laser

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	Monolithic semiconductor laser
其他题名	Monolithic semiconductor laser
	TANABE, TETSUHIRO
	2011-06-21
专利权人	ROHM CO., LTD.
公开日期	2011-06-21
授权国家	美国
专利类型	授权发明
摘要	An infrared element (10a) which includes at least a light emitting layer forming portion (9a) composed of, for example, a first conductivity type cladding layer (2a), an active layer (3a), and a second conductivity type cladding layer (4a) for emitting infrared light, is formed on a semiconductor substrate (1), and a red element (10b) which includes at least a light emitting layer forming portion (9b) composed of, for example, a first conductivity type cladding layer (2b), an active layer (3b), and a second conductivity type cladding layer (4b) for emitting red light, is formed on the same semiconductor substrate (1). And their second conductivity type cladding layers (4a and 4b) are made of the same material. As a result, forming process of their ridge portions may be communized and both of the elements can be formed respectively, with a window structure capable of high output operation.
其他摘要	一种红外元件（10a），至少包括由例如第一导电型包层（2a），有源层（3a）和第二导电型包层构成的发光层形成部分（9a）（ 4a）用于发射红外光，形成在半导体衬底（1）上，和红色元件（10b），其至少包括由例如第一导电型包层构成的发光层形成部分（9b）（如图2b）所示，在同一半导体衬底（1）上形成有源层（3b）和用于发射红光的第二导电型包层（4b）。并且它们的第二导电型包层（4a和4b）由相同的材料制成。结果，它们的脊部分的形成过程可以共同化，并且两个元件可以分别形成，具有能够高输出操作的窗口结构。
主权项	A monolithic semiconductor laser comprising: a semiconductor substrate; a first wavelength semiconductor laser element provided on the semiconductor substrate, the first wavelength semiconductor laser element comprising a first wavelength light emitting layer forming portion which includes a first conductivity type cladding layer, an active layer and a second conductivity type cladding layer, for emitting a first wavelength light; and a second wavelength semiconductor laser element provided on a region of the semiconductor substrate, where the first wavelength semiconductor laser element is not formed, the second wavelength semiconductor laser element comprising a second wavelength light emitting layer forming portion which includes a first conductivity type cladding layer, an active layer and a second conductivity type cladding layer, for emitting a second wavelength light, wherein a buffer layer is provided between the substrate and the first conductivity type cladding layers of the first wavelength semiconductor laser element and the second wavelength semiconductor laser element, wherein materials forming the second conductivity type cladding layers for the first and second wavelength semiconductor laser elements are the same material, and wherein each of the second conductivity type layers of the light emitting layer forming portions of the first and second wavelength semiconductor laser elements is formed with a ridge structure in which a ridge portion is formed, and first conductivity type current constriction layers are provided at sides of the ridge portions, each of the first conductivity type current constriction layers of the first and second wavelength semiconductor laser elements having larger band gap energy than that of the active layer thereof, and being made of the same material each other.
申请日期	2006-08-23
专利号	US7965753
专利状态	失效
申请号	US11/990843
公开（公告）号	US7965753
IPC 分类号	H01S5/00
专利代理人	-
代理机构	RABIN & BERDO,PC
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44451
专题	半导体激光器专利数据库
作者单位	ROHM CO., LTD.
推荐引用方式 GB/T 7714	TANABE, TETSUHIRO. Monolithic semiconductor laser. US7965753[P]. 2011-06-21.

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