Vertical-cavity surface-emitting diode laser

OPT OpenIR > 半导体激光器专利数据库

	Vertical-cavity surface-emitting diode laser
其他题名	Vertical-cavity surface-emitting diode laser
	BOTEZ, DAN; MAWST, LUKE J.; ROTH, THOMAS J.; ZINKIEWICZ, LAWRENCE M.
	1991-08-06
专利权人	TRW INC., A CORP. OF OH
公开日期	1991-08-06
授权国家	美国
专利类型	授权发明
摘要	A semiconductor diode laser device, and a related method for its fabrication, the laser being of the type from which light is emitted in a direction perpendicular to planar layers forming the device. The laser includes an active layer and cladding layers formed on a supporting substrate, and a highly reflective semiconductor stack reflector formed on one of the cladding layers. The semiconductor stack reflector may be placed in contact with a heat sink and performs the multiple functions of electrical current conduction, heat removal and light reflection. A current confinement layer is formed laterally surrounding the semiconductor stack reflector, to provide one element of a back-biased junction that confines the current to the reflector region. A dielectric stack reflector is formed in a well in the substrate, and provides for light emission from the device. Operation of the device at high powers and efficiencies, even in continous-wave (CW) mode, is made possible by positioning the active layer in close proximity to the heat sink, and by the effectiveness of the current confinement layer surrounding the semiconductor stack reflector.
其他摘要	一种半导体二极管激光器件及其制造方法，该激光器是在垂直于形成器件的平面层的方向上发射光的类型。激光器包括形成在支撑衬底上的有源层和包层，以及形成在一个包层上的高反射半导体叠层反射器。半导体堆叠反射器可以放置成与散热器接触并且执行电流传导，热移除和光反射的多种功能。围绕半导体堆叠反射器横向地形成电流限制层，以提供背偏置结的一个元件，其将电流限制到反射器区域。介质堆叠反射器形成在衬底中的阱中，并提供来自器件的光发射。通过将有源层定位在散热器附近，并且通过围绕半导体堆叠反射器的电流限制层的有效性，即使在连续波（CW）模式下也可以以高功率和高效率操作器件。。
主权项	A vertical-cavity surface-emitting diode laser providing high output power at a high quantum efficiency, the laser comprising: a semiconductor supporting structure, including a substrate; a combination of generally planar semiconductor layers formed on one side of the substrate and including an active layer in which lasing takes place, and a pair of cladding layers positioned one on each side of the active layer; a first stack reflector formed on the combination of active and cladding layers and providing a highly reflective first mirror for a vertical cavity within the laser; a second stack reflector formed in a well recessed into the other side of the substrate, and having a reflectivity less than that of the first stack reflector, to provide a second mirror for the vertical cavity of the laser, through which light is emitted; and a pair of electrical contact layers, one on the first stack reflector and the other on the other side of the substrate, to inject current into the laser cavity; wherein the diode laser is mountable on a heat sink with the active layer positioned between the semiconductor supporting structure and the heat sink.
申请日期	1989-12-04
专利号	US5038356
专利状态	失效
申请号	US07/445223
公开（公告）号	US5038356
IPC 分类号	H01S5/00 \| H01S5/183 \| H01S3/19
专利代理人	-
代理机构	HEAL, NOEL F. GOLDSTEIN, SOL L.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44436
专题	半导体激光器专利数据库
作者单位	TRW INC., A CORP. OF OH
推荐引用方式 GB/T 7714	BOTEZ, DAN,MAWST, LUKE J.,ROTH, THOMAS J.,et al. Vertical-cavity surface-emitting diode laser. US5038356[P]. 1991-08-06.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
US5038356.PDF（534KB）	专利		开放获取	CC BY-NC-SA	请求全文