High power semiconductor laser device

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	High power semiconductor laser device
其他题名	High power semiconductor laser device
	MA, BYUNG JIN; BAE, SEONG JU
	2008-12-16
专利权人	SAMSUNG ELECTRONICS CO., LTD.
公开日期	2008-12-16
授权国家	美国
专利类型	授权发明
摘要	In a high power semiconductor laser device, first and second conductivity type clad layers are provided. An active layer is interposed between the first and second conductivity type clad layers. A first optical guide layer is disposed between the first conductivity type clad layer and the active layer. A second optical guide layer is disposed between the second conductivity clad layer and the active layer. Also, an intentionally undoes optical loss confinement region is formed in a portion of at least one of the first and second conductivity type clad layers overlapping laser beam distribution.
其他摘要	在高功率半导体激光器件中，提供第一和第二导电类型包层。在第一和第二导电类型包层之间插入有源层。第一光导层设置在第一导电类型包层和有源层之间。第二光导层设置在第二导电覆层和有源层之间。另外，在第一和第二导电类型包层中的至少一个的与激光束分布重叠的部分中形成有意去除光学损耗限制区域。
主权项	A semiconductor laser device comprising: first and second conductivity type clad layers; an active layer interposed between the first and second conductivity type clad layers; a first optical guide layer disposed between the first conductivity type clad layer and the active layer; a second optical guide layer disposed between the second conductivity clad layer and the active layer; and an intentionally undoped optical loss confinement region formed in a portion of at least one of the first and second conductivity type clad layers overlapping laser beam distribution.
申请日期	2007-02-22
专利号	US7466737
专利状态	授权
申请号	US11/677646
公开（公告）号	US7466737
IPC 分类号	H01S5/00
专利代理人	-
代理机构	MCDERMOTT WILL & EMERY LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44421
专题	半导体激光器专利数据库
作者单位	SAMSUNG ELECTRONICS CO., LTD.
推荐引用方式 GB/T 7714	MA, BYUNG JIN,BAE, SEONG JU. High power semiconductor laser device. US7466737[P]. 2008-12-16.

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