Phased array semiconductor lasers fabricated from impurity induced disordering

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	Phased array semiconductor lasers fabricated from impurity induced disordering
其他题名	Phased array semiconductor lasers fabricated from impurity induced disordering
	BURNHAM, ROBERT D.; THORNTON, ROBERT L.
	1988-02-23
专利权人	XEROX CORPORATION, STAMFORD, FAIRFIELD, CONNECTICUT, A CORP OF NEW YORK
公开日期	1988-02-23
授权国家	美国
专利类型	授权发明
摘要	Phased array semiconductor lasers provide fundamental or preferred 1st supermode operation wherein fabrication is accomplished by a single, continuous fabricating process, e.g. MO-CVD or MBE, followed by impurity induced disordering (IID), e.g. utilization of the impurity diffusion technique or the implant/anneal technique as now known in the art. The laser comprising this invention is provided with a relatively thin active region or with a single or multiple quantum well structure in the active region and is fabricated by forming spatially disposed impurity induced disordering regions extending into or penetrating through the active region to form spatially disposed regions capable of providing higher gain compared to adjacent regions not experiencing impurity induced disordering. The adjacent regions without impurity induced disordering contain unspoiled regions that provide high real index waveguiding compared to the adjacent disordered regions with the diffusions in the disordered regions have higher conductivity properties compared to the remaining ordered regions and are, therefore, more efficiently pumped electrically. As a result, disordered regions form alternating higher gain regions offset between regions of nondisordered waveguide regions having higher real index waveguiding properties but lower gain properties, thereby fulfilling the conditions necessary to provide fundamental or preferred 1st supermode operation.
其他摘要	相控阵半导体激光器提供基本或优选的第一超模操作，其中制造是通过单个连续的制造工艺完成的，例如，制造工艺。 MO-CVD或MBE，然后是杂质诱导的无序化（IID），例如，利用现有技术中已知的杂质扩散技术或注入/退火技术。包括本发明的激光器在有源区中具有相对薄的有源区或具有单个或多个量子阱结构，并且通过形成空间布置的杂质诱导的无序区域来制造，所述无序引发的无序区域延伸到或穿透有源区域以形成空间布置的区域。与没有经历杂质引起的无序化的相邻区域相比，能够提供更高的增益。与相邻的无序区域相比，没有杂质引起的无序化的相邻区域包含提供高实际折射率波导的未受污染区域，其中无序区域中的扩散与其余有序区域相比具有更高的导电性，因此更有效地泵浦电。结果，无序区域在具有较高实际折射率波导特性但较低增益特性的非无序波导区域的区域之间形成交替的较高增益区域偏移，从而满足提供基本或优选的第一超模操作所需的条件。
主权项	In a phased array semiconductor laser having a plurality of semiconductor layers with a series of multiple lasing elements disposed in spatially separated optical cavities therein, said layers including an active region for light wave generation and propagation under lasing conditions and wherein the optical field of said lasing elements are coupled to provide a phase locked condition across the array, an impurity induced into regions laterally adjacent to and between said spatially separated optical cavities and penetrating through said active region therein causing a partial or full interdiffusion of elemental constituents of said therein active region with elemental constituents of at least one adjacent semiconductor layer to produce disordered alloy regions having a higher gain than the gain experience in said optical cavities and having an average lower refractive index profile therein compared to the original refractive index profile present in said optical cavities thereby creative of an index waveguide for said optical cavities.
申请日期	1985-12-30
专利号	US4727557
专利状态	失效
申请号	US06/814863
公开（公告）号	US4727557
IPC 分类号	H01S5/40 \| H01S5/00 \| H01S5/20 \| H01S3/19
专利代理人	-
代理机构	CAROTHERS,JR., W. DOUGLAS
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44393
专题	半导体激光器专利数据库
作者单位	XEROX CORPORATION, STAMFORD, FAIRFIELD, CONNECTICUT, A CORP OF NEW YORK
推荐引用方式 GB/T 7714	BURNHAM, ROBERT D.,THORNTON, ROBERT L.. Phased array semiconductor lasers fabricated from impurity induced disordering. US4727557[P]. 1988-02-23.

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