High speed data channel including a CMOS vcsel driver and a high performance photodetector and CMOS photoreceiver

OPT OpenIR > 半导体激光器专利数据库

	High speed data channel including a CMOS vcsel driver and a high performance photodetector and CMOS photoreceiver
其他题名	High speed data channel including a CMOS vcsel driver and a high performance photodetector and CMOS photoreceiver
	BOZSO, FERENC, M.; EMMA, PHILIP, G.
专利权人	COMPAGNIE IBM FRANCE
公开日期	2005-08-24
授权国家	欧洲专利局
专利类型	发明申请
摘要	A high speed optical channel including an optical driver and a photodetector in a CMOS photoreceiver. The optical channel driver includes a FET driver circuit driving a passive element (e.g., an integrated loop inductor) and a vertical cavity surface emitting laser (VCSEL) diode. The VCSEL diode is biased by a bias supply. The integrated loop inductor may be integrated in CMOS technology and on the same IC chip as either/both of the FET driver and the VCSEL diode. The photodetector is in a semiconductor (silicon) layer that may be on an insulator layer, i.e., SOI. One or more ultrathin metal electrodes (<2000A) on the silicon layer forms a Schottky barrier diode junction which in turn forms a quantum well containing a two dimensional electron gas between the ultrathin metal electrode and the Schottky barrier diode junction.
其他摘要	一种高速光学通道，包括CMOS光接收器中的光学驱动器和光电探测器。光学通道驱动器包括驱动无源元件（例如，集成环路电感器）和垂直腔表面发射激光器（VCSEL）二极管的FET驱动器电路。 VCSEL二极管由偏置电源偏置。集成环路电感器可以集成在CMOS技术中，并且与FET驱动器和VCSEL二极管中的任一个/两者在同一IC芯片上集成。光电探测器位于半导体（硅）层中，该半导体（硅）层可以位于绝缘层上，即SOI。硅层上的一个或多个超薄金属电极（<2000A）形成肖特基势垒二极管结，其又在超薄金属电极和肖特基势垒二极管结之间形成包含二维电子气的量子阱。
申请日期	2003-10-23
专利号	EP1565971A2
专利状态	失效
申请号	EP2003780072
公开（公告）号	EP1565971A2
IPC 分类号	H01S5/183 \| H01S5/026 \| H01S5/042 \| H01S5/062 \| H01S5/022
专利代理人	-
代理机构	DE PENA, ALAIN
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44238
专题	半导体激光器专利数据库
作者单位	COMPAGNIE IBM FRANCE
推荐引用方式 GB/T 7714	BOZSO, FERENC, M.,EMMA, PHILIP, G.. High speed data channel including a CMOS vcsel driver and a high performance photodetector and CMOS photoreceiver. EP1565971A2.