Sort pulse light source and generating method for short pulse light

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	Sort pulse light source and generating method for short pulse light
其他题名	Sort pulse light source and generating method for short pulse light
	MIYAZAWA TAKEO; NAGANUMA KAZUNORI; IWAMURA HIDETOSHI
专利权人	日本電信電話株式会社
公开日期	1992-08-06
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a light having a shorter pulse width than that of a prior art type semiconductor mode locking laser by strengthening a pulse sharpening operation in a light amplifying region and a saturable absorption region. CONSTITUTION:A light amplifying region 1 is formed in a graded index InGaAs/ InGaAsP quantum well laser structure. The numbers of InGaAs well layers of a quantum well 10 and InGaAsP barrier layers are 12 and 11, a clad layer 11 is made of InP, and the uppermost part of an epitaxial layer is formed of an Inlays cap layer 12. A DC current slightly larger than a threshold value is applied to the above laser structure. A reverse bias is applied to the same laser structure of a saturable absorption region to operate as a saturable absorber. A high frequency current of 16GHz is applied to the region 1 to obtain a pulse having 8GHz of a repetition frequency and 1ps of a width.
其他摘要	目的：通过加强光放大区域和可饱和吸收区域中的脉冲锐化操作，获得脉冲宽度比现有技术类型半导体锁模激光器短的光。组成：光放大区域1形成在渐变折射率InGaAs / InGaAsP量子阱激光器结构中。量子阱10和InGaAsP势垒层的InGaAs阱层的数量是12和11，包层11由InP制成，并且外延层的最上部分由Inlays盖层12形成。稍微的DC电流将大于阈值的值应用于上述激光器结构。将反向偏压施加到可饱和吸收区域的相同激光器结构，以作为可饱和吸收器操作。将16GHz的高频电流施加到区域1以获得具有8GHz重复频率和1ps宽度的脉冲。
申请日期	1990-12-14
专利号	JP1992215489A
专利状态	失效
申请号	JP1990402399
公开（公告）号	JP1992215489A
IPC 分类号	H01S5/00 \| H01S5/042 \| H01S3/096 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44077
专题	半导体激光器专利数据库
作者单位	日本電信電話株式会社
推荐引用方式 GB/T 7714	MIYAZAWA TAKEO,NAGANUMA KAZUNORI,IWAMURA HIDETOSHI. Sort pulse light source and generating method for short pulse light. JP1992215489A.