Method for producing semiconductor and semiconductor laser device

OPT OpenIR > 半导体激光器专利数据库

	Method for producing semiconductor and semiconductor laser device
其他题名	Method for producing semiconductor and semiconductor laser device
	TSUJIMURA, AYUMU; HASEGAWA, YOSHIAKI; ISHIBASHI, AKIHIKO; KIDOGUCHI, ISAO; BAN, YUZABURO
专利权人	PANNOVA SEMIC, LLC
公开日期	2001-07-19
授权国家	美国
专利类型	发明申请
摘要	The method for producing a semiconductor of the present invention grows a compound semiconductor on a substrate held by a susceptor provided, in a reaction chamber in accordance with a metalorganic vapor phase epitaxy technique. The method includes the steps of: supplying a Group III source gas containing indium and a Group V source gas containing nitrogen into the reaction chamber; and mixing the Group III and Group V source gases, supplied into the reaction chamber, with each other, and supplying a rare gas as a carrier gas into the reaction chamber so as to carry the mixed source gas onto the upper surface of the substrate.
其他摘要	本发明的半导体制造方法根据金属有机气相外延技术在反应室中在由基座保持的基板上生长化合物半导体。该方法包括以下步骤：将含有铟的第III族源气体和含氮的第V族源气体供应到反应室中;将供给到反应室中的III族和V族源气体相互混合，并将稀有气体作为载气供给反应室，以便将混合的源气体输送到基板的上表面上。
申请日期	2001-03-02
专利号	US20010008285A1
专利状态	失效
申请号	US09/796702
公开（公告）号	US20010008285A1
IPC 分类号	C30B25/02 \| C30B25/14 \| H01L21/203 \| H01L21/205 \| H01L33/00 \| H01L33/06 \| H01L33/14 \| H01L33/32 \| H01L33/34 \| H01S5/00 \| H01S5/223 \| H01S5/323 \| H01S5/343
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44055
专题	半导体激光器专利数据库
作者单位	PANNOVA SEMIC, LLC
推荐引用方式 GB/T 7714	TSUJIMURA, AYUMU,HASEGAWA, YOSHIAKI,ISHIBASHI, AKIHIKO,et al. Method for producing semiconductor and semiconductor laser device. US20010008285A1.