Gallium nitride based compound semiconductor light-emitting device

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	Gallium nitride based compound semiconductor light-emitting device
其他题名	Gallium nitride based compound semiconductor light-emitting device
	NIDO, MASAAKI; KURAMOTO, MASARU; YAMAGUCHI, ATSUSHI
专利权人	SAMSUNG ELECTRONICS CO., LTD.
公开日期	2003-03-20
授权国家	美国
专利类型	发明申请
摘要	A light-emitting semiconductor device includes an active layer interposed between first-side and second-side cladding layer, and at least one of first-side and second-side optical guide layers. The following four equations are satisfied: 0.15<=h; \|x-y\|<=0.02; 0.02<=x<=0.06; and 0.34x-0.49<=d1+2h, where "h" is a total thickness of the first-side and second-side optical guide layers; "d1" is a thickness of the first-side cladding layer; "x" is a first Al-index of a first AlGaN bulk crystal which has a first refractive index equal to a first averaged refractive index of the first-side cladding layer; and "y" represents a second Al-index of a second AlGaN bulk crystal which has a second refractive index equal to a second averaged refractive index of the second-side cladding layer.
其他摘要	发光半导体器件包括插入在第一侧和第二侧包层之间的有源层，以及第一侧和第二侧光导层中的至少一个。满足以下四个方程：0.15 <= h;\| X-Y \| <= 0.02;0.02 <= X <= 0.06;0.34x-0.49 <= d1 + 2h，其中“h”是第一侧和第二侧光导层的总厚度;“d1”是第一侧包覆层的厚度;“x”是第一AlGaN块状晶体的第一Al指数，其具有等于第一侧包覆层的第一平均折射率的第一折射率;“y”表示第二AlGaN块状晶体的第二Al指数，其具有等于第二侧包覆层的第二平均折射率的第二折射率。
申请日期	2002-09-09
专利号	US20030052316A1
专利状态	授权
申请号	US10/237077
公开（公告）号	US20030052316A1
IPC 分类号	H01L31/0336 \| H01L31/101 \| H01S5/00 \| H01S5/22 \| H01S5/223 \| H01S5/227 \| H01S5/32 \| H01S5/323 \| H01S5/343
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/43731
专题	半导体激光器专利数据库
作者单位	SAMSUNG ELECTRONICS CO., LTD.
推荐引用方式 GB/T 7714	NIDO, MASAAKI,KURAMOTO, MASARU,YAMAGUCHI, ATSUSHI. Gallium nitride based compound semiconductor light-emitting device. US20030052316A1.