Xi'an Institute of Optics and Precision Mechanics,CAS
Rapid growth method and structures for gallium and nitrogen containing ultra-thin epitaxial structures for devices | |
其他题名 | Rapid growth method and structures for gallium and nitrogen containing ultra-thin epitaxial structures for devices |
RARING, JAMES; CHAKRABORTY, ARPAN; POBLENZ, CHRISTIANE | |
专利权人 | SORAA, INC. |
公开日期 | 2011-02-24 |
授权国家 | 世界知识产权组织 |
专利类型 | 发明申请 |
摘要 | A method for rapid growth of gallium and nitrogen containing material is described. The method includes providing a bulk gallium and nitrogen containing substrate. A first epitaxial material of first thickness is formed over the substrate, preferably with a pseudomorphical process. The method also forms a second epitaxial layer over the first to create a stacked structure. The stacked structure consists of a total thickness of less than about 2 microns. |
其他摘要 | 描述了一种用于快速生长含镓和氮的材料的方法。该方法包括提供块状含镓和氮的基板。在衬底上形成第一厚度的第一外延材料,优选地采用假晶形工艺。该方法还在第一外延层上形成第二外延层以形成堆叠结构。堆叠结构的总厚度小于约2微米。 |
申请日期 | 2010-08-20 |
专利号 | WO2011022699A1 |
专利状态 | 未确认 |
申请号 | PCT/US2010/046231 |
公开(公告)号 | WO2011022699A1 |
IPC 分类号 | H01L21/00 |
专利代理人 | KAO, DAH-BIN |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/43588 |
专题 | 半导体激光器专利数据库 |
作者单位 | SORAA, INC. |
推荐引用方式 GB/T 7714 | RARING, JAMES,CHAKRABORTY, ARPAN,POBLENZ, CHRISTIANE. Rapid growth method and structures for gallium and nitrogen containing ultra-thin epitaxial structures for devices. WO2011022699A1. |
条目包含的文件 | 条目无相关文件。 |
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