Rapid growth method and structures for gallium and nitrogen containing ultra-thin epitaxial structures for devices

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	Rapid growth method and structures for gallium and nitrogen containing ultra-thin epitaxial structures for devices
其他题名	Rapid growth method and structures for gallium and nitrogen containing ultra-thin epitaxial structures for devices
	RARING, JAMES; CHAKRABORTY, ARPAN; POBLENZ, CHRISTIANE
专利权人	SORAA, INC.
公开日期	2011-02-24
授权国家	世界知识产权组织
专利类型	发明申请
摘要	A method for rapid growth of gallium and nitrogen containing material is described. The method includes providing a bulk gallium and nitrogen containing substrate. A first epitaxial material of first thickness is formed over the substrate, preferably with a pseudomorphical process. The method also forms a second epitaxial layer over the first to create a stacked structure. The stacked structure consists of a total thickness of less than about 2 microns.
其他摘要	描述了一种用于快速生长含镓和氮的材料的方法。该方法包括提供块状含镓和氮的基板。在衬底上形成第一厚度的第一外延材料，优选地采用假晶形工艺。该方法还在第一外延层上形成第二外延层以形成堆叠结构。堆叠结构的总厚度小于约2微米。
申请日期	2010-08-20
专利号	WO2011022699A1
专利状态	未确认
申请号	PCT/US2010/046231
公开（公告）号	WO2011022699A1
IPC 分类号	H01L21/00
专利代理人	KAO, DAH-BIN
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/43588
专题	半导体激光器专利数据库
作者单位	SORAA, INC.
推荐引用方式 GB/T 7714	RARING, JAMES,CHAKRABORTY, ARPAN,POBLENZ, CHRISTIANE. Rapid growth method and structures for gallium and nitrogen containing ultra-thin epitaxial structures for devices. WO2011022699A1.