Buried Heterostructure Device Having Integrated Waveguide Grating Fabricated By Single Step MOCVD

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	Buried Heterostructure Device Having Integrated Waveguide Grating Fabricated By Single Step MOCVD
其他题名	Buried Heterostructure Device Having Integrated Waveguide Grating Fabricated By Single Step MOCVD
	BOUR, DAVID P.; CORZINE, SCOTT W.
专利权人	AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
公开日期	2009-03-12
授权国家	美国
专利类型	发明申请
摘要	The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is located on the semiconductor surface and defines an elongate growth window having a periodic grating profile. The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material at a second growth temperature, lower than the first growth temperature.
其他摘要	该装置是光电装置或透明波导装置，其包括生长表面，生长掩模，光波导芯台面和包层。生长掩模位于半导体表面上并限定了具有周期性光栅轮廓的细长生长窗口。光波导芯子台面位于生长窗口中并具有梯形横截面形状。包层覆盖光波导核心台面并在生长掩模的至少一部分上延伸。通过提供包括生长表面的晶片，通过在第一生长温度下的微选择区域生长在生长表面上生长光波导核心台面并在第二生长温度下用包层材料覆盖光波导核心台面来制造这种器件，低于第一个生长温度。
申请日期	2008-09-10
专利号	US20090068778A1
专利状态	失效
申请号	US12/207521
公开（公告）号	US20090068778A1
IPC 分类号	H01L21/00 \| G02B6/10 \| G02B6/13 \| H01S5/20 \| H01S5/22 \| H01S5/227 \| H01S5/32 \| H01S5/343
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/43578
专题	半导体激光器专利数据库
作者单位	AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
推荐引用方式 GB/T 7714	BOUR, DAVID P.,CORZINE, SCOTT W.. Buried Heterostructure Device Having Integrated Waveguide Grating Fabricated By Single Step MOCVD. US20090068778A1.