Method for lift off GaN pseudomask epitaxy layer using wafer bonding way

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	Method for lift off GaN pseudomask epitaxy layer using wafer bonding way
其他题名	Method for lift off GaN pseudomask epitaxy layer using wafer bonding way
	WU, YEW-CHUNG; LIN, PEI-YEN; PENG, HSIEN-CHIH
专利权人	NATIONAL CHIAO TUNG UNIVERSITY
公开日期	2005-08-25
授权国家	美国
专利类型	发明申请
摘要	The epitaxial lateral overgrowth (ELOG) GaN obtains the dangling structure by using wet etching and the transferred substrate to separate from the GaN epitaxy layer by using stress concentration of thermal expansion coefficient of the transferred substrate. It is useful to separate of the GaN epitaxy layer and transferred substrate by using anneal of wafer bonding. The present invention is to provide high selective etching rate, no damage to epitaxial film, low cost, and feasibility for larger commercial sizes. The wet etching method can not damage the separated epitaxial substrate, thus the substrate can be reused. There are various choices of handling substrate for bonding, not limited by the epitaxial method. When the epitaxial film is applied in devices, the low defect density of the epitaxial film can enhance the lifetime and efficiency of the devices. The addition of this improved fabrication process does not require expensive equipment. Moreover, it will reduce the production cost. The epitaxy substrate is a recyclable substrate after separation of wet etching method and the transferred epitaxy layer obtain low defect density, lifetime improvement and low cost.
其他摘要	外延横向过生长（ELOG）GaN通过使用湿法蚀刻获得悬挂结构，并且通过使用转移衬底的热膨胀系数的应力集中将转移的衬底与GaN外延层分离。通过使用晶片键合的退火来分离GaN外延层和转移的衬底是有用的。本发明提供高选择性蚀刻速率，对外延膜没有损坏，成本低，并且对于更大的商业尺寸是可行的。湿法蚀刻方法不会损坏分离的外延衬底，因此可以重复使用衬底。处理用于键合的衬底有各种选择，不受外延方法的限制。当外延膜应用于器件中时，外延膜的低缺陷密度可以提高器件的寿命和效率。添加这种改进的制造工艺不需要昂贵的设备。而且，它将降低生产成本。外延衬底是湿法蚀刻方法分离后的可再循环衬底，并且转移的外延层获得低缺陷密度，寿命改善和低成本。
申请日期	2004-02-20
专利号	US20050186757A1
专利状态	失效
申请号	US10/781892
公开（公告）号	US20050186757A1
IPC 分类号	H01L21/00 \| H01L21/20 \| H01L29/24
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/43479
专题	半导体激光器专利数据库
作者单位	NATIONAL CHIAO TUNG UNIVERSITY
推荐引用方式 GB/T 7714	WU, YEW-CHUNG,LIN, PEI-YEN,PENG, HSIEN-CHIH. Method for lift off GaN pseudomask epitaxy layer using wafer bonding way. US20050186757A1.