Semiconductor photodetector with internal reflector

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor photodetector with internal reflector
其他题名	Semiconductor photodetector with internal reflector
	BLAUVELT, HENRY A.; LEE, HAO; VERNOOY, DAVID W.
专利权人	XPONENT PHOTONICS INC.
公开日期	2004-05-04
授权国家	澳大利亚
专利类型	发明申请
摘要	A photodetector comprises a semiconductor substrate with entrance and reflecting faces formed at the substrate upper surface. The reflecting face forms an acute angle with the substrate surface and is positioned so that an optical beam transmitted through the entrance face into the substrate is internally reflected from the reflecting face toward the substrate upper surface. A photodetector active region is formed on the substrate upper surface and is positioned so that the reflected optical beam impinges on the active region. The photodetector may be mounted on a second substrate for receiving an optical beam from a planar waveguide formed on the second substrate or an optical fiber mounted in a groove on the second substrate.
其他摘要	光电探测器包括半导体衬底，该衬底具有形成在衬底上表面上的入射和反射面。反射面与基板表面形成锐角，并且定位成使得通过入射面透射到基板中的光束在内部从反射面朝向基板上表面反射。光电探测器有源区形成在基板上表面上，并且定位成使得反射的光束照射在有源区上。光电探测器可以安装在第二基板上，用于从形成在第二基板上的平面波导或安装在第二基板上的凹槽中的光纤接收光束。
申请日期	2003-09-12
专利号	AU2003270519A1
专利状态	失效
申请号	AU2003270519
公开（公告）号	AU2003270519A1
IPC 分类号	H01L31/0232 \| G02B6/26 \| G02B6/42 \| H01L21/00 \| H01L31/02 \| H01L31/0352 \| H01L31/101 \| H01L31/105 \| H01L31/107 \| H01L31/16 \| H01L31/18 \| H01L35/24 \| H01L
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/43466
专题	半导体激光器专利数据库
作者单位	XPONENT PHOTONICS INC.
推荐引用方式 GB/T 7714	BLAUVELT, HENRY A.,LEE, HAO,VERNOOY, DAVID W.. Semiconductor photodetector with internal reflector. AU2003270519A1.