Method of fabricating a light emitting device, and light emitting device

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	Method of fabricating a light emitting device, and light emitting device
其他题名	Method of fabricating a light emitting device, and light emitting device
	SHINOHARA, MASAYUKI; YAMADA, MASATO
专利权人	SHIN-ETSU HANDOTAI CO., LTD.
公开日期	2004-02-05
授权国家	美国
专利类型	发明申请
摘要	In the fabricating of a light emitting device, a light emitting layer portion 24 and a current spreading layer 7, respectively composed of a Group III-V compound semiconductor, are stacked on a single crystal substrate. The light emitting layer portion 24 is formed by a metal organic vapor-phase epitaxy process, and the current spreading layer 7, on such light emitting layer portion 24, is formed to have conductivity type of n-type by a hydride vapor-phase epitaxy process.
其他摘要	在发光器件的制造中，分别由III-V族化合物半导体构成的发光层部分24和电流扩散层7堆叠在单晶衬底上。发光层部分24通过金属有机气相外延工艺形成，并且在这样的发光层部分24上的电流扩散层7通过氢化物气相外延形成为具有n型导电类型。处理。
申请日期	2003-07-28
专利号	US20040023426A1
专利状态	失效
申请号	US10/627892
公开（公告）号	US20040023426A1
IPC 分类号	H01L21/205 \| H01L33/10 \| H01L33/14 \| H01L33/16 \| H01L33/30 \| H01L33/38 \| H01L21/00 \| H01L21/20 \| H01L21/36
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/43463
专题	半导体激光器专利数据库
作者单位	SHIN-ETSU HANDOTAI CO., LTD.
推荐引用方式 GB/T 7714	SHINOHARA, MASAYUKI,YAMADA, MASATO. Method of fabricating a light emitting device, and light emitting device. US20040023426A1.