Xi'an Institute of Optics and Precision Mechanics,CAS
Method of fabricating a light emitting device, and light emitting device | |
其他题名 | Method of fabricating a light emitting device, and light emitting device |
SHINOHARA, MASAYUKI; YAMADA, MASATO | |
专利权人 | SHIN-ETSU HANDOTAI CO., LTD. |
公开日期 | 2004-02-05 |
授权国家 | 美国 |
专利类型 | 发明申请 |
摘要 | In the fabricating of a light emitting device, a light emitting layer portion 24 and a current spreading layer 7, respectively composed of a Group III-V compound semiconductor, are stacked on a single crystal substrate. The light emitting layer portion 24 is formed by a metal organic vapor-phase epitaxy process, and the current spreading layer 7, on such light emitting layer portion 24, is formed to have conductivity type of n-type by a hydride vapor-phase epitaxy process. |
其他摘要 | 在发光器件的制造中,分别由III-V族化合物半导体构成的发光层部分24和电流扩散层7堆叠在单晶衬底上。发光层部分24通过金属有机气相外延工艺形成,并且在这样的发光层部分24上的电流扩散层7通过氢化物气相外延形成为具有n型导电类型。处理。 |
申请日期 | 2003-07-28 |
专利号 | US20040023426A1 |
专利状态 | 失效 |
申请号 | US10/627892 |
公开(公告)号 | US20040023426A1 |
IPC 分类号 | H01L21/205 | H01L33/10 | H01L33/14 | H01L33/16 | H01L33/30 | H01L33/38 | H01L21/00 | H01L21/20 | H01L21/36 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/43463 |
专题 | 半导体激光器专利数据库 |
作者单位 | SHIN-ETSU HANDOTAI CO., LTD. |
推荐引用方式 GB/T 7714 | SHINOHARA, MASAYUKI,YAMADA, MASATO. Method of fabricating a light emitting device, and light emitting device. US20040023426A1. |
条目包含的文件 | 条目无相关文件。 |
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