Method of fabricating a light emitting device and light emitting device

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	Method of fabricating a light emitting device and light emitting device
其他题名	Method of fabricating a light emitting device and light emitting device
	SHINOHARA, MASAYUKI; YAMADA, MASATO
专利权人	SHIN-ETSU HANDOTAI, CO., LTD.
公开日期	2003-11-27
授权国家	美国
专利类型	发明申请
摘要	In the light emitting device having, a light emitting layer portion and a current spreading layer, respectively composed of a Group III-V compound semiconductor, formed on a single crystal substrate, the light emitting layer portion is formed on the single crystal substrate by the metal organic vapor-phase epitaxy process, and on such light emitting layer portion the current spreading layer is formed by the hydride vapor-phase epitaxy process. A high-concentration doped layer is also formed in a surficial area including the main surface on the electrode forming side of the current spreading layer, so as to have a carrier concentration of p-type dopant higher than that in the residual portion of the current spreading layer. A current blocking layer which comprises a Group III-V compound semiconductor having a conductivity type different from that of the current spreading layer is formed in the midway in the thickness-wise direction of the current spreading layer as being buried therein At least a portion of the current spreading layer covering the current blocking layer on the electrode side is formed by the hydride vapor-phase epitaxy process (the second vapor-phase growth step). The current spreading layer is composed of GaAs1-aPa (0.5<=a<=0.9). An off-angled substrate is available as the single crystal substrate.
其他摘要	在具有分别由III-V族化合物半导体构成的发光层部分和电流扩散层的发光器件中，在单晶衬底上形成发光层部分，通过该单晶衬底形成发光层部分。金属有机气相外延工艺，在这种发光层部分上，电流扩散层通过氢化物气相外延工艺形成。在包括电流扩散层的电极形成侧的主表面的表面区域中也形成高浓度掺杂层，以使p型掺杂剂的载流子浓度高于电流的剩余部分中的p型掺杂剂的载流子浓度。传播层。在电流扩散层的厚度方向的中途形成包括具有与电流扩散层的导电类型不同的III-V族化合物半导体的电流阻挡层，其中埋入其中的至少一部分。通过氢化物气相外延工艺（第二气相生长步骤）形成覆盖电极侧上的电流阻挡层的电流扩散层。电流扩散层由GaAs1-aPa（0.5 <= a <= 0.9）组成。离角衬底可用作单晶衬底。
申请日期	2003-05-13
专利号	US20030219918A1
专利状态	授权
申请号	US10/436440
公开（公告）号	US20030219918A1
IPC 分类号	H01L33/02 \| H01L33/14 \| H01L21/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/43454
专题	半导体激光器专利数据库
作者单位	SHIN-ETSU HANDOTAI, CO., LTD.
推荐引用方式 GB/T 7714	SHINOHARA, MASAYUKI,YAMADA, MASATO. Method of fabricating a light emitting device and light emitting device. US20030219918A1.