Iii-v arsenide nitride semiconductor substrate

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	Iii-v arsenide nitride semiconductor substrate
其他题名	Iii-v arsenide nitride semiconductor substrate
	RAMDANI, JAMAL; HILT, LYNDEE, L.
专利权人	MOTOROLA, INC.
公开日期	2003-01-30
授权国家	世界知识产权组织
专利类型	发明申请
摘要	High quality epitaxial layers of monocrystalline III-V arsenide nitride materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (74, 104) on a silicon wafer (72, 102). The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (78, 108) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline III-V arsenide nitride material layer. Any lattice mismatch between the accommodating buffer layerand the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, an accommodating buffer layer comprising a barium strontium titanium oxide (104) and a monocrystalline III-V arsenide nitride layer (86, 116), such as GaAsN, having a nitrogen concentration ranging from 1-5% function to further reduce any lattice mismatch between layers.
其他摘要	通过形成用于生长单晶层的柔顺衬底，可以在单晶衬底（例如大硅晶片）上生长高质量的单晶III-V族砷化物材料外延层。实现柔顺衬底的形成的一种方式包括首先在硅晶片（72,102）上生长容纳缓冲层（74,104）。容纳缓冲层是通过氧化硅的非晶界面层（78,108）与硅晶片隔开的单晶氧化物层。非晶界面层消散应变并允许高质量单晶氧化物容纳缓冲层的生长。容纳缓冲层与下面的硅晶片和上面的单晶III-V族砷化物材料层晶格匹配。通过非晶界面层处理容纳缓冲层和下面的硅衬底之间的任何晶格失配。此外，包含钡锶钛氧化物（104）和单晶III-V砷化物氮化物层（86,116）的容纳缓冲层，例如GaAsN，氮浓度范围为1-5％，用于进一步减少任何层之间的晶格不匹配。
申请日期	2002-04-09
专利号	WO2003009344A2
专利状态	未确认
申请号	PCT/US2002/011023
公开（公告）号	WO2003009344A2
IPC 分类号	H01S5/323 \| H01L33/12 \| H01L33/00 \| C30B25/18 \| H01S5/02 \| H01L21/20 \| H01L21/00
专利代理人	KOCH, WILLIAM, E.
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/43430
专题	半导体激光器专利数据库
作者单位	MOTOROLA, INC.
推荐引用方式 GB/T 7714	RAMDANI, JAMAL,HILT, LYNDEE, L.. Iii-v arsenide nitride semiconductor substrate. WO2003009344A2.

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