Semiconductor device and semiconductor light emitting device

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	Semiconductor device and semiconductor light emitting device
其他题名	Semiconductor device and semiconductor light emitting device
	OKUYAMA, HIROYUKI
	2002-10-08
专利权人	SONY CORPORATION
公开日期	2002-10-08
授权国家	美国
专利类型	授权发明
摘要	There are provided a semiconductor light emitting device using high-quality and high-performance nitride III-V compound semiconductors which can reduce the threshold current density and operation voltage, and can shorten the emission wavelength to the ultraviolet range and a semiconductor device using nitride III-V compound semiconductors excellent in electric property and optical property and having a high band gap. In a GaN semiconductor light emitting device, desired layers among a plurality of semiconductor layers forming its light emitting structure are made of nitride III-V compound semiconductors containing B while limiting the B composition not higher than 0.3. More specifically, sequentially stacked on a c-plane sapphire substrate are, via a B0.05Ga0.95N buffer layer, a B0.05Ga0.95N layer, n-type B0.02Al0.03Ga0.95N cladding layer, n-type GaN optical guide layer, active layer having a MQW structure including quantum well layers of Ga0.85In0.15N, p-type B0.1Ga0.9N cap layer, p-type GaN optical guide layer, p-type B0.02Al0.03Ga0.95N cladding layer and p-type B0.02Ga0.96N contact layer.
其他摘要	提供一种使用高质量和高性能氮化物III-V化合物半导体的半导体发光器件，其可以降低阈值电流密度和工作电压，并且可以将发射波长缩短到紫外范围，并且提供使用氮化物III的半导体器件-V化合物半导体具有优异的电特性和光学特性，并具有高带隙。在GaN半导体发光器件中，形成其发光结构的多个半导体层中的所需层由包含B的氮化物III-V化合物半导体制成，同时限制B组分不高于0.3。更具体地，顺序堆叠在c面蓝宝石衬底上，经由B0.05Ga0.95N缓冲层，B0.05Ga0.95N层，n型B0.02Al0.03Ga0.95N包层，n型GaN光学层引导层，具有MQW结构的有源层，包括Ga0.85In0.15N的量子阱层，p型B0.1Ga0.9N帽层，p型GaN光导层，p型B0.02Al0.03Ga0.95N包层层和p型B0.02Ga0.96N接触层。
授权日期	2002-10-08
申请日期	2000-05-22
专利号	US6462354
专利状态	授权
申请号	US09/575236
公开（公告）号	US6462354
IPC 分类号	H01L33/00 \| H01S5/323 \| H01S5/00 \| H01L33/06 \| H01L33/12 \| H01L33/32 \| H01S5/227 \| H01S5/343 \| H01L29/06
专利代理人	-
代理机构	SONNENSCHEIN,NATH & ROSENTHAL
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/42366
专题	半导体激光器专利数据库
作者单位	SONY CORPORATION
推荐引用方式 GB/T 7714	OKUYAMA, HIROYUKI. Semiconductor device and semiconductor light emitting device. US6462354[P]. 2002-10-08.

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