Semimagnetic semiconductor laser

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	Semimagnetic semiconductor laser
其他题名	Semimagnetic semiconductor laser
	BECLA, PIOTR
	1989-03-14
专利权人	MASSACHUSETTS INSTITUTE OF TECHNOLOGY, CAMBRIDGE, MASSACHUSETTS, A CORP. OF MASSACHUSETTS.
公开日期	1989-03-14
授权国家	美国
专利类型	授权发明
摘要	The laser has three regions p-n-n+ or n-p-p+ of magnetic element alloyed Group II-VI elements such as Cd, Hg, and Te doped with an element having a high atomic radius such as Sb or In. The magnetic element may be Mn or Fe. Vapor phase epitaxy is used to create a substrate having graded energy band gap characteristic across its thickness. A two-step liquid phase epitaxy process is used to grow an active layer and a passive layer to create the laser heterostructure. The index of refraction of the active region is higher than the indexes of refraction of the substrate and passive regions. The graded energy band gap and high doping of the substrate region results in a very low resistance which minimizes a temperature rise resulting from joule heating at high current densities. The relationship of the indexes of refraction of the layers result in double sided optical confinement to support lasing. In a semimagnetic semiconductor such as HgMnTe, the coefficient dEg/dB is large and opposite than in nonmagnetic semiconductors, making it possible to tune the laser by external magnetic fields.
其他摘要	激光器具有三个区域p-n-n +或n-p-p +磁性元素合金化的II-VI族元素，例如Cd，Hg和Te，其掺杂有具有高原子半径的元素，例如Sb或In。磁性元素可以是Mn或Fe。气相外延用于产生在其厚度上具有渐变能带隙特性的衬底。两步液相外延工艺用于生长有源层和无源层以产生激光异质结构。有源区的折射率高于衬底和无源区的折射率。渐变能带隙和衬底区域的高掺杂导致非常低的电阻，这使得在高电流密度下由焦耳加热引起的温度升高最小化。层的折射率的关系导致双面光学限制以支持激光。在诸如HgMnTe的半磁性半导体中，系数dEg / dB大且与非磁性半导体相反，使得可以通过外部磁场调谐激光。
授权日期	1989-03-14
申请日期	1987-09-23
专利号	US4813049
专利状态	失效
申请号	US07/100119
公开（公告）号	US4813049
IPC 分类号	H01S5/327 \| H01S5/00 \| H01S5/02 \| H01S3/19
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/42341
专题	半导体激光器专利数据库
作者单位	MASSACHUSETTS INSTITUTE OF TECHNOLOGY, CAMBRIDGE, MASSACHUSETTS, A CORP. OF MASSACHUSETTS.
推荐引用方式 GB/T 7714	BECLA, PIOTR. Semimagnetic semiconductor laser. US4813049[P]. 1989-03-14.

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