Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials

OPT OpenIR > 半导体激光器专利数据库

	Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials
其他题名	Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials
	KHARE, REENA; KISH, FRED A.
	2001-03-13
专利权人	LUMILEDS LLC
公开日期	2001-03-13
授权国家	美国
专利类型	授权发明
摘要	For AlGaAs LEDs the confining layers adjoining the active layer possess the highest Al composition. From failure analysis of non-passivated, WHTOL-aged, AlGaAs LEDs, it was discovered that corrosion occurs the fastest at the exposed surfaces of the high Al-content confining layers. By placing a high-quality native oxide at the exposed surfaces of the high Al-content confining layers which protect from the formation of the "poor' oxide, it is possible for LEDs to retain essentially their same light output after 2,000 hours of WHTOL testing. Further, it is possible to improve carrier confinement, carrier injection, wave guiding, and other properties by increasing the Al-content of different layers.
其他摘要	对于AlGaAs LED，邻接有源层的限制层具有最高的Al组分。从非钝化的WHTOL老化的AlGaAs LED的失效分析中发现，在高Al含量限制层的暴露表面处发生腐蚀最快。通过在高Al含量限制层的暴露表面放置高质量的原生氧化物，防止形成“不良”氧化物，LED可以在2000小时的WHTOL测试后保持基本相同的光输出此外，通过增加不同层的Al含量，可以改善载流子限制，载流子注入，波导和其他性质。
授权日期	2001-03-13
申请日期	1999-01-14
专利号	US6201264
专利状态	失效
申请号	US09/231411
公开（公告）号	US6201264
IPC 分类号	H01L33/00 \| H01S5/00 \| H01S5/183 \| H01L33/30 \| H01L33/44 \| H01S5/323 \| H01L31/0304 \| H01S3/19
专利代理人	-
代理机构	SKJERVEN MORRILL MACPHERSON LLP OGONOWSKY, BRIAN D. SCHMIDT, MARK E.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/42262
专题	半导体激光器专利数据库
作者单位	LUMILEDS LLC
推荐引用方式 GB/T 7714	KHARE, REENA,KISH, FRED A.. Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials. US6201264[P]. 2001-03-13.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
US6201264.PDF（1210KB）	专利		开放获取	CC BY-NC-SA	请求全文