Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser device and manufacturing method therefor | |
其他题名 | Semiconductor laser device and manufacturing method therefor |
KINEI, SATOFUMI; HASHIMOTO, TAKAHIRO | |
2005-03-08 | |
专利权人 | SHARP KABUSHIKI KAISHA |
公开日期 | 2005-03-08 |
授权国家 | 美国 |
专利类型 | 授权发明 |
摘要 | There is provided a semiconductor laser device which is generally uniform in carrier concentration of a clad layer, almost free from strain, and less demanding for time and labor in its manufacturing, and which has stable characteristics. On an n-GaAs substrate, an n-type clad layer, an active layer, a p-type clad layer, and a cap layer are stacked one on another at a temperature of 700-750° C. Widthwise both side portions of the cap layer as well as widthwise both side specified-depth portions of the p-type clad layer are removed by etching to form a ridge portion, and a current constriction layer is formed on widthwise both sides of the ridge portion. A flattening layer having a planar surface is formed on the current constriction layer and the cap layer by slow cooling LPE process at a temperature of 700° C. or lower. On the flattening layer, a contact layer is formed by MOCVD process at a temperature of about 650° C. |
其他摘要 | 本发明提供一种半导体激光装置,其包层的载流子浓度通常均匀,几乎没有应变,制造时的时间和劳动力要求不高,并且具有稳定的特性。在n-GaAs衬底上,n型覆层,有源层,p型覆层和覆盖层在700-750℃的温度下彼此堆叠。宽度方向的两侧部分通过蚀刻去除p层覆盖层的盖层以及宽度方向的两侧特定深度部分以形成脊部,并且在脊部的宽度方向两侧形成电流限制层。通过在700℃或更低的温度下缓慢冷却LPE工艺,在电流限制层和盖层上形成具有平坦表面的平坦化层。在平坦化层上,通过MOCVD工艺在约650℃的温度下形成接触层。 |
授权日期 | 2005-03-08 |
申请日期 | 2002-07-02 |
专利号 | US6865206 |
专利状态 | 失效 |
申请号 | US10/187445 |
公开(公告)号 | US6865206 |
IPC 分类号 | H01S5/223 | H01S5/00 | H01S5/32 | H01S5/042 | H01L21/205 | H01L21/208 |
专利代理人 | - |
代理机构 | MORRISON & FOERSTER LLP |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/42200 |
专题 | 半导体激光器专利数据库 |
作者单位 | SHARP KABUSHIKI KAISHA |
推荐引用方式 GB/T 7714 | KINEI, SATOFUMI,HASHIMOTO, TAKAHIRO. Semiconductor laser device and manufacturing method therefor. US6865206[P]. 2005-03-08. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
US6865206.PDF(176KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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