Method of fabricating ridge waveguide semiconductor light-emitting device

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	Method of fabricating ridge waveguide semiconductor light-emitting device
其他题名	Method of fabricating ridge waveguide semiconductor light-emitting device
	HO, JIN-KUO; CHIU, CHIENCHIA; CHENG, CHENN-SHIUNG; CHEN, TSE-JUN
	2001-01-16
专利权人	INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
公开日期	2001-01-16
授权国家	美国
专利类型	授权发明
摘要	A method of fabricating a ridge waveguide semiconductor light-emitting device is provided in which an oxide semiconductor having a heavy carrier concentration serves as the interface of the metal layer and the epitaxial layer to make the current flow through the ridge waveguide. This invention forms an oxide semiconductor having a heavy carrier concentration thereon after finishing the basic structure of a ridge waveguide semiconductor light-emitting device, then forms a metal layer to conduct current. Since the carrier concentration at the surface of the ridge waveguide is higher than that at the inner portion, the current primarily flows through the interface of the oxide semiconductor having a heavy carrier concentration and the vertex of the ridge waveguide. Thus the current is restricted to only flow through the vertex of the ridge waveguide.
其他摘要	提供一种制造脊形波导半导体发光器件的方法，其中具有重载流子浓度的氧化物半导体用作金属层和外延层的界面，以使电流流过脊形波导。本发明在完成脊形波导半导体发光器件的基本结构之后，在其上形成具有重载流子浓度的氧化物半导体，然后形成金属层以传导电流。由于脊形波导表面处的载流子浓度高于内部部分处的载流子浓度，因此电流主要流过具有重载流子浓度的氧化物半导体和脊形波导的顶点的界面。因此，电流被限制为仅流过脊形波导的顶点。
授权日期	2001-01-16
申请日期	1999-03-30
专利号	US6174747
专利状态	失效
申请号	US09/281009
公开（公告）号	US6174747
IPC 分类号	H01S5/22 \| H01S5/00 \| H01L27/15 \| H01L33/00 \| H01S5/20 \| H01S5/223 \| H01S5/042 \| H01L21/00
专利代理人	-
代理机构	BEYER WEAVER & THOMAS,LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/42170
专题	半导体激光器专利数据库
作者单位	INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
推荐引用方式 GB/T 7714	HO, JIN-KUO,CHIU, CHIENCHIA,CHENG, CHENN-SHIUNG,et al. Method of fabricating ridge waveguide semiconductor light-emitting device. US6174747[P]. 2001-01-16.

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