Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor optoelectronic device and method of fabricating the same | |
其他题名 | Semiconductor optoelectronic device and method of fabricating the same |
SON, JOONG-KON; RYU, HAN-YOUL; SAKONG, TAN; PAEK, HO-SUN; LEE, SUNG-NAM | |
2010-05-25 | |
专利权人 | SAMSUNG ELECTRONICS CO., LTD. |
公开日期 | 2010-05-25 |
授权国家 | 美国 |
专利类型 | 授权发明 |
摘要 | Provided is a semiconductor opto-electronic device that may comprise an active layer including a quantum well and a barrier layer on a substrate, upper and lower waveguide layers on and underneath the active layer, respectively, and upper and lower clad layers on and underneath the upper and lower waveguide layers, respectively. The semiconductor opto-electronic device may further comprise an upper optical confinement layer (OCL) between the active layer and the upper waveguide layer and having an energy gap smaller than the energy gap of the upper waveguide layer and equal to or larger than the energy gap of the barrier layer, and a lower OCL between the active layer and the lower waveguide layer and having an energy gap smaller than the energy gap of the lower waveguide layer and equal to or smaller than the energy gap of the barrier layer. Also provided is a method of fabricating the semiconductor opto-electronic device. |
其他摘要 | 提供一种半导体光电器件,其可包括有源层,该有源层包括在衬底上的量子阱和阻挡层,在有源层上和下面的上和下波导层,以及在其上和下面的上和下包层。上部和下部波导层分别。半导体光电器件还可以包括在有源层和上波导层之间的上光学限制层(OCL),并且具有小于上波导层的能隙并且等于或大于能隙的能隙。阻挡层的一部分,以及有源层和下部波导层之间的下部OCL,并且具有小于下部波导层的能隙并且等于或小于阻挡层的能隙的能隙。还提供了一种制造半导体光电器件的方法。 |
授权日期 | 2010-05-25 |
申请日期 | 2007-07-25 |
专利号 | US7724795 |
专利状态 | 授权 |
申请号 | US11/878495 |
公开(公告)号 | US7724795 |
IPC 分类号 | H01S5/00 |
专利代理人 | - |
代理机构 | HARNESS,DICKEY & PIERCE,P.L.C. |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/42161 |
专题 | 半导体激光器专利数据库 |
作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
推荐引用方式 GB/T 7714 | SON, JOONG-KON,RYU, HAN-YOUL,SAKONG, TAN,et al. Semiconductor optoelectronic device and method of fabricating the same. US7724795[P]. 2010-05-25. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
US7724795.PDF(114KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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